Niru Chowdhury, Kacho Imtiyaz Ali Khan, Himanshu Bangar, Pankhuri Gupta, Ram Singh Yadav, Rekha Agarwal, Akash Kumar, Pranaba Kishor Muduli
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引用次数: 0
摘要
拓扑量子材料领域的最新发展刺激了对可作为下一代存储器应用构建块的材料的研究。由于其有趣的拓扑特性,如平带、狄拉克节点和Weyl点,kagome磁铁有望成为这一应用的主要材料。在这篇简短的综述中,我们讨论了用于新兴存储器件的铁磁性和反铁磁性二元kagome磁体的一些最新进展。首先,我们讨论铁磁kagome磁体,特别是Fe \(_3\) Sn \(_2\),然后我们讨论非共线反铁磁kagome磁体Mn \(_3\) Sn和Mn \(_3\) Ir。最后,我们讨论了共线反铁磁kagome磁体FeSn。在上述的每一节中,我们首先讨论它们的拓扑,结构和磁性,然后是特定应用的研究,如自旋轨道扭矩(SOT)。在最后一节中,我们讨论了kagome磁体用于高效、更快、更密集和可靠的存储技术的现状,重点是SOT开关和skyrmions的观察/操作。
Kagome Magnets: The Emerging Materials for Spintronic Memories
Recent developments in the field of topological quantum materials have stimulated the search for materials that could serve as the building blocks for next-generation memory applications. Due to their intriguing topological properties, such as flat bands, Dirac nodes, and Weyl points, kagome magnets are anticipated to be the leading materials for this application. In this mini review, we discuss some of the recent advancements in binary kagome magnets, both ferromagnetic and anti-ferromagnetic, for use as emerging memory devices. First, we discuss ferromagnetic kagome magnets, specifically Fe\(_3\)Sn\(_2\), and then we discuss non-collinear antiferromagnetic kagome magnets, Mn\(_3\)Sn and Mn\(_3\)Ir. Finally, we discuss collinear antiferromagnetic kagome magnet, FeSn. In each of the aforementioned sections, we begin with a discussion of their topological, structural, and magnetic properties, followed by application-specific studies such as spin-orbit torques (SOT). In the final section, we discuss the current state of kagome magnets for efficient, faster, denser, and reliable memory technologies with focus on the SOT switching and observation/manipulation of skyrmions.