III-V型化合物半导体超晶格中的面内热声子输运分析

IF 2.7 3区工程技术 Q2 ENGINEERING, MECHANICAL Nanoscale and Microscale Thermophysical Engineering Pub Date : 2018-07-03 DOI:10.1080/15567265.2018.1486929

K. Kothari, M. Maldovan

{"title":"III-V型化合物半导体超晶格中的面内热声子输运分析","authors":"K. Kothari, M. Maldovan","doi":"10.1080/15567265.2018.1486929","DOIUrl":null,"url":null,"abstract":"ABSTRACT Controlling thermal transport in optoelectronic devices is a fundamental determinant of optimum performance. We study in-plane thermal transport mechanisms in GaAs/AlAs and their alloy-based superlattices while rigorously accounting for phonon interlayer coupling and interface scattering. We provide an extensive microscopic analysis of phonon transport to enable rational thermal material design. We also predict the thermal conductivity of realistic finite-sized GaAs/AlAs superlattices for efficient heat control in III–V superlattice-based optoelectronic devices.","PeriodicalId":49784,"journal":{"name":"Nanoscale and Microscale Thermophysical Engineering","volume":"22 1","pages":"239 - 253"},"PeriodicalIF":2.7000,"publicationDate":"2018-07-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1080/15567265.2018.1486929","citationCount":"4","resultStr":"{\"title\":\"Analysis of in-plane thermal phonon transport in III–V compound semiconductor superlattices\",\"authors\":\"K. Kothari, M. Maldovan\",\"doi\":\"10.1080/15567265.2018.1486929\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"ABSTRACT Controlling thermal transport in optoelectronic devices is a fundamental determinant of optimum performance. We study in-plane thermal transport mechanisms in GaAs/AlAs and their alloy-based superlattices while rigorously accounting for phonon interlayer coupling and interface scattering. We provide an extensive microscopic analysis of phonon transport to enable rational thermal material design. We also predict the thermal conductivity of realistic finite-sized GaAs/AlAs superlattices for efficient heat control in III–V superlattice-based optoelectronic devices.\",\"PeriodicalId\":49784,\"journal\":{\"name\":\"Nanoscale and Microscale Thermophysical Engineering\",\"volume\":\"22 1\",\"pages\":\"239 - 253\"},\"PeriodicalIF\":2.7000,\"publicationDate\":\"2018-07-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1080/15567265.2018.1486929\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Nanoscale and Microscale Thermophysical Engineering\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1080/15567265.2018.1486929\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, MECHANICAL\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nanoscale and Microscale Thermophysical Engineering","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1080/15567265.2018.1486929","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, MECHANICAL","Score":null,"Total":0}

引用次数: 4

摘要

控制光电器件的热输运是光电器件最佳性能的基本决定因素。我们研究了GaAs/AlAs及其合金基超晶格中的平面内热输运机制，同时严格考虑声子层间耦合和界面散射。我们提供了广泛的微观分析声子输运，使合理的热材料设计。我们还预测了实际有限尺寸GaAs/AlAs超晶格的热导率，用于III-V超晶格光电器件的有效热控制。

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Analysis of in-plane thermal phonon transport in III–V compound semiconductor superlattices

ABSTRACT Controlling thermal transport in optoelectronic devices is a fundamental determinant of optimum performance. We study in-plane thermal transport mechanisms in GaAs/AlAs and their alloy-based superlattices while rigorously accounting for phonon interlayer coupling and interface scattering. We provide an extensive microscopic analysis of phonon transport to enable rational thermal material design. We also predict the thermal conductivity of realistic finite-sized GaAs/AlAs superlattices for efficient heat control in III–V superlattice-based optoelectronic devices.

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来源期刊

Nanoscale and Microscale Thermophysical Engineering 工程技术-材料科学：表征与测试

CiteScore

5.90

自引率

2.40%

发文量

审稿时长

3.3 months

期刊介绍： Nanoscale and Microscale Thermophysical Engineering is a journal covering the basic science and engineering of nanoscale and microscale energy and mass transport, conversion, and storage processes. In addition, the journal addresses the uses of these principles for device and system applications in the fields of energy, environment, information, medicine, and transportation. The journal publishes both original research articles and reviews of historical accounts, latest progresses, and future directions in this rapidly advancing field. Papers deal with such topics as: transport and interactions of electrons, phonons, photons, and spins in solids, interfacial energy transport and phase change processes, microscale and nanoscale fluid and mass transport and chemical reaction, molecular-level energy transport, storage, conversion, reaction, and phase transition, near field thermal radiation and plasmonic effects, ultrafast and high spatial resolution measurements, multi length and time scale modeling and computations, processing of nanostructured materials, including composites, micro and nanoscale manufacturing, energy conversion and storage devices and systems, thermal management devices and systems, microfluidic and nanofluidic devices and systems, molecular analysis devices and systems.