超低功耗逻辑存储器,具有商用级忆阻器和基于fpga的smart-IMPLY架构

IF 2.6 4区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC Microelectronic Engineering Pub Date : 2023-08-15 DOI:10.1016/j.mee.2023.112062
Lorenzo Benatti, Tommaso Zanotti, Paolo Pavan, Francesco Maria Puglisi
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引用次数: 0

摘要

在当今的计算机技术中,降低功耗是一项日益艰巨的挑战。传统的计算架构受到所谓的冯·诺伊曼瓶颈(VNB)的困扰,这包括在存储器和处理单元之间持续需要交换数据和指令,导致显著且显然不可避免的功耗。即使是通常用于运行人工智能(AI)算法的硬件,如深度神经网络(DNN),也受到这种限制。为了满足对超低功耗、自主和智能系统不断增长的需求,需要改变模式。从这个角度来看,新兴的记忆非易失性存储器被认为是引领这种技术向下一代硬件平台过渡的一个很好的候选者,使得在同一位置存储和处理信息成为可能,从而绕过VNB。为了评估当前公共可用器件的状态,本研究对商业级封装自向通道记忆电阻器进行了深入研究,以评估其在内存计算框架中的性能。具体来说,允许突触权值的模拟更新和稳定的二进制切换的操作条件被确定,以及相关的问题。为此,设计并实现了一个基于FPGA控制平台的专用原型系统。然后,利用它来充分表征创新的智能隐含(简单)逻辑内存(LiM)计算框架的功耗性能,该框架允许在内存中可靠地计算经典布尔运算。将这些结果投射到纳秒范围,可以对这种计算范式的真正潜力进行估计。虽然没有在这项工作中进行研究,但所提出的平台也可以用于测试基于忆阻器的SNN和二值化dnn(即BNN),它们可以与LiM相结合,以提供异构的灵活架构,作为无处不在和普遍存在的人工智能的长期目标。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Ultra-low power logic in memory with commercial grade memristors and FPGA-based smart-IMPLY architecture

Reducing power consumption in nowadays computer technologies represents an increasingly difficult challenge. Conventional computing architectures suffer from the so-called von Neumann bottleneck (VNB), which consists in the continuous need to exchange data and instructions between the memory and the processing unit, leading to significant and apparently unavoidable power consumption. Even the hardware typically employed to run Artificial Intelligence (AI) algorithms, such as Deep Neural Networks (DNN), suffers from this limitation. A change of paradigm is so needed to comply with the ever-increasing demand for ultra-low power, autonomous, and intelligent systems. From this perspective, emerging memristive non-volatile memories are considered a good candidate to lead this technological transition toward the next-generation hardware platforms, enabling the possibility to store and process information in the same place, therefore bypassing the VNB. To evaluate the state of current public-available devices, in this work commercial-grade packaged Self Directed Channel memristors are thoroughly studied to evaluate their performance in the framework of in-memory computing. Specifically, the operating conditions allowing both analog update of the synaptic weight and stable binary switching are identified, along with the associated issues. To this purpose, a dedicated yet prototypical system based on an FPGA control platform is designed and realized. Then, it is exploited to fully characterize the performance in terms of power consumption of an innovative Smart IMPLY (SIMPLY) Logic-in-Memory (LiM) computing framework that allows reliable in-memory computation of classical Boolean operations. The projection of these results to the nanoseconds regime leads to an estimation of the real potential of this computing paradigm. Although not investigated in this work, the presented platform can also be exploited to test memristor-based SNN and Binarized DNNs (i.e., BNN), that can be combined with LiM to provide the heterogeneous flexible architecture envisioned as the long-term goal for ubiquitous and pervasive AI.

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来源期刊
Microelectronic Engineering
Microelectronic Engineering 工程技术-工程:电子与电气
CiteScore
5.30
自引率
4.30%
发文量
131
审稿时长
29 days
期刊介绍: Microelectronic Engineering is the premier nanoprocessing, and nanotechnology journal focusing on fabrication of electronic, photonic, bioelectronic, electromechanic and fluidic devices and systems, and their applications in the broad areas of electronics, photonics, energy, life sciences, and environment. It covers also the expanding interdisciplinary field of "more than Moore" and "beyond Moore" integrated nanoelectronics / photonics and micro-/nano-/bio-systems. Through its unique mixture of peer-reviewed articles, reviews, accelerated publications, short and Technical notes, and the latest research news on key developments, Microelectronic Engineering provides comprehensive coverage of this exciting, interdisciplinary and dynamic new field for researchers in academia and professionals in industry.
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