Drag resistivity of hole-hole static interactions with the effect of non-homogeneous dielectric medium

We have study the Coulomb drag phenomena for hole-hole static potentials theoretically and measured numerically using the random phase approximation (RPA) method The drag resistivity is evaluated at low temperature, large interlayer separation limit and weakly screening regime, with the geometry of two atomically thin materials, such as, BLG/GaAs based multilayer system, is a promising systems in nanomaterials and technology Static local field corrections (LFC) are considered to take into account the Exchange-correlations (XC) and mutual interaction effects with varying concentrations of active and passive layer It is found that the drag resistivity is found enhanced on using the LFC effects and increases on increasing the effective mass. In Fermi-Liquid regime, drag resistivity is directly proportional to T^2, n^(-3), d^(-4) and ϵ^2 with respect to temperature (T), density (n), interlayer separation (d~nm) and dielectric constant (ϵ_2), respectively. Dependency of drag resistivity is measured and compared to 2D e-e and e-h coupled-layer systems with and without the effect of non-homogeneous dielectric medium.