从亚阈值特性测定量子阱激光二极管的非辐射载流子寿命

IF 1.9 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Semiconductor Science and Technology Pub Date : 2023-08-31 DOI:10.1088/1361-6641/acf59b

E. McVay, R. Deri, W. Fenwick, S. Baxamusa, Jiang Li, N. Allen, D. Mittelberger, R. Swertfeger, S. Telford, M. Boisselle, D. Pope, D. Dutra, Logan Martin, Laina V. Gilmore, G. Thaler, M. Crowley, Jiyon Song, P. Thiagarajan

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引用次数: 0

摘要

提出了一种测定量子阱激光二极管波导和有源区非辐射载流子寿命的方法。该方法适用于全封装器件的表征，如果器件结构已知，则不需要特殊的测量设备。该方法在多个800 nm激光二极管上进行了实验验证。

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Determination of nonradiative carrier lifetimes in quantum well laser diodes from subthreshold characteristics

A method for determination of non-radiative carrier lifetimes in the waveguide and active regions of quantum well laser diodes is presented. This method is suitable for characterization of fully packaged devices and requires no special measurement equipment if the device structure is known. The proposed approach is experimentally demonstrated for several 800 nm laser diodes.

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来源期刊

Semiconductor Science and Technology 工程技术-材料科学：综合

CiteScore

4.30

自引率

5.30%

发文量

216

审稿时长

2.4 months

期刊介绍： Devoted to semiconductor research, Semiconductor Science and Technology''s multidisciplinary approach reflects the far-reaching nature of this topic. The scope of the journal covers fundamental and applied experimental and theoretical studies of the properties of non-organic, organic and oxide semiconductors, their interfaces and devices, including: fundamental properties materials and nanostructures devices and applications fabrication and processing new analytical techniques simulation emerging fields: materials and devices for quantum technologies hybrid structures and devices 2D and topological materials metamaterials semiconductors for energy flexible electronics.