{"title":"近红外区域等离子宽带gst开关","authors":"Saman Heidari, Najmeh Nozhat","doi":"10.1049/ote2.12073","DOIUrl":null,"url":null,"abstract":"<p>In this paper, we present a GST-based wideband plasmonic switch. With the excitation of localised surface plasmons and concentration of electric field in the structure, a near-perfect and wideband absorption is achieved. The switch consists of a GST layer, which acts as a Fabry–Perot cavity. Increasing the temperature and changing the state of GST lead to a high difference between the absorption spectra in amorphous and crystalline states in a wide range of wavelength. Therefore, the switch has a high extinction ratio of 13.71 dB at the wavelength of 1343 nm. Also, the response time of the switch is obtained as 46 fs. The structure has near-perfect absorption up to the incident angle of about 20°. Moreover, due to the symmetry of structure, the absorption spectrum is independent of polarisation. To show the validity of simulation results, the analytical method of equivalent circuit model is presented. The proposed polarisation-insensitive switch with high extinction ratio, fast response time and wide bandwidth can be used in photodetectors, plasmonic modulators and logic gates.</p>","PeriodicalId":13408,"journal":{"name":"Iet Optoelectronics","volume":"16 5","pages":"201-206"},"PeriodicalIF":2.3000,"publicationDate":"2022-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/ote2.12073","citationCount":"3","resultStr":"{\"title\":\"Plasmonic wideband GST-based switch in the near-infrared region\",\"authors\":\"Saman Heidari, Najmeh Nozhat\",\"doi\":\"10.1049/ote2.12073\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>In this paper, we present a GST-based wideband plasmonic switch. With the excitation of localised surface plasmons and concentration of electric field in the structure, a near-perfect and wideband absorption is achieved. The switch consists of a GST layer, which acts as a Fabry–Perot cavity. Increasing the temperature and changing the state of GST lead to a high difference between the absorption spectra in amorphous and crystalline states in a wide range of wavelength. Therefore, the switch has a high extinction ratio of 13.71 dB at the wavelength of 1343 nm. Also, the response time of the switch is obtained as 46 fs. The structure has near-perfect absorption up to the incident angle of about 20°. Moreover, due to the symmetry of structure, the absorption spectrum is independent of polarisation. To show the validity of simulation results, the analytical method of equivalent circuit model is presented. The proposed polarisation-insensitive switch with high extinction ratio, fast response time and wide bandwidth can be used in photodetectors, plasmonic modulators and logic gates.</p>\",\"PeriodicalId\":13408,\"journal\":{\"name\":\"Iet Optoelectronics\",\"volume\":\"16 5\",\"pages\":\"201-206\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2022-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ietresearch.onlinelibrary.wiley.com/doi/epdf/10.1049/ote2.12073\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Iet Optoelectronics\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1049/ote2.12073\",\"RegionNum\":4,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Iet Optoelectronics","FirstCategoryId":"94","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1049/ote2.12073","RegionNum":4,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Plasmonic wideband GST-based switch in the near-infrared region
In this paper, we present a GST-based wideband plasmonic switch. With the excitation of localised surface plasmons and concentration of electric field in the structure, a near-perfect and wideband absorption is achieved. The switch consists of a GST layer, which acts as a Fabry–Perot cavity. Increasing the temperature and changing the state of GST lead to a high difference between the absorption spectra in amorphous and crystalline states in a wide range of wavelength. Therefore, the switch has a high extinction ratio of 13.71 dB at the wavelength of 1343 nm. Also, the response time of the switch is obtained as 46 fs. The structure has near-perfect absorption up to the incident angle of about 20°. Moreover, due to the symmetry of structure, the absorption spectrum is independent of polarisation. To show the validity of simulation results, the analytical method of equivalent circuit model is presented. The proposed polarisation-insensitive switch with high extinction ratio, fast response time and wide bandwidth can be used in photodetectors, plasmonic modulators and logic gates.
期刊介绍:
IET Optoelectronics publishes state of the art research papers in the field of optoelectronics and photonics. The topics that are covered by the journal include optical and optoelectronic materials, nanophotonics, metamaterials and photonic crystals, light sources (e.g. LEDs, lasers and devices for lighting), optical modulation and multiplexing, optical fibres, cables and connectors, optical amplifiers, photodetectors and optical receivers, photonic integrated circuits, photonic systems, optical signal processing and holography and displays.
Most of the papers published describe original research from universities and industrial and government laboratories. However correspondence suggesting review papers and tutorials is welcomed, as are suggestions for special issues.
IET Optoelectronics covers but is not limited to the following topics:
Optical and optoelectronic materials
Light sources, including LEDs, lasers and devices for lighting
Optical modulation and multiplexing
Optical fibres, cables and connectors
Optical amplifiers
Photodetectors and optical receivers
Photonic integrated circuits
Nanophotonics and photonic crystals
Optical signal processing
Holography
Displays