B. Synkiewicz-Musialska, D. Szwagierczak, J. Kulawik, E. Czerwińska
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Preparation and characterization of doped LiZn0.92Cu0.08PO4 ceramic for microwave and millimeter-wave substrates
Purpose
This paper aims to report on fabrication procedure and presents microstructure and dielectric behaviour of LiZn0.92Cu0.08PO4 ceramic material with Li2CO3 as a sintering aid.
Design/methodology/approach
Substrates based on LiZn0.92Cu0.08PO4 with Li2CO3 addition were prepared via solid-state synthesis, doping, milling, pressing and sintering. Characterization of the composition, microstructure and dielectric properties was performed using X-ray diffractometry, energy dispersive spectroscopy, scanning electron microscopy, impedance spectroscopy in the 100 Hz to 2 MHz range and time-domain spectroscopy in the 0.1–3 THz range.
Findings
Doped LiZnPO4 ceramic, which exhibits a low dielectric constant of 5.9 at 1 THz and low sintering temperature of 800 °C, suitable for low temperature co-fired ceramics (LTCC) technology, was successfully prepared. However, further studies are needed to lower dielectric losses by optimising the doping level, synthesis and sintering conditions.
Originality/value
Search for new low dielectric constant materials applicable in LTCC technology and optimization of processing are essential tasks for developing modern microwave circuits. The dielectric characterization of doped LiZnPO4 ceramic in the terahertz range, which was performed for the first time, is crucial for potential millimetre-wave applications of this substrate material.
期刊介绍:
Microelectronics International provides an authoritative, international and independent forum for the critical evaluation and dissemination of research and development, applications, processes and current practices relating to advanced packaging, micro-circuit engineering, interconnection, semiconductor technology and systems engineering. It represents a current, comprehensive and practical information tool. The Editor, Dr John Atkinson, welcomes contributions to the journal including technical papers, research papers, case studies and review papers for publication. Please view the Author Guidelines for further details.
Microelectronics International comprises a multi-disciplinary study of the key technologies and related issues associated with the design, manufacture, assembly and various applications of miniaturized electronic devices and advanced packages. Among the broad range of topics covered are:
• Advanced packaging
• Ceramics
• Chip attachment
• Chip on board (COB)
• Chip scale packaging
• Flexible substrates
• MEMS
• Micro-circuit technology
• Microelectronic materials
• Multichip modules (MCMs)
• Organic/polymer electronics
• Printed electronics
• Semiconductor technology
• Solid state sensors
• Thermal management
• Thick/thin film technology
• Wafer scale processing.