Fabrication of UV ZnO NRS photodetector based on seeded silicon substrate via the drop-casting technique

Purpose The purpose of this study is to fabricate an ultraviolet (UV) metal-semiconductor-metal (MSM) photodetector based on zinc oxide nanorods (ZnO NRs) grown on seeded silicon (Si) substrate that was prepared by a low-cost method (drop-casting technique). Design/methodology/approach The drop-casting method was used for the seed layer deposition, the hydrothermal method was used for the growth of ZnO NRs and subsequent fabrication of UV MSM photodetector was done using the direct current sputtering technique. The performance of the fabricated MSM devices was investigated by current–voltage (I–V) measurements. The photodetection mechanism of the fabricated device was discussed. Findings Semi-vertically high-density ZnO (NRs) were effectively produced with a preferential orientation along the (002) direction, and increased crystallinity is confirmed by X-ray diffraction analysis. Photoluminescence results show a high UV region. The fabricated MSM UV photodetector showed that the ZnO (NRs) MSM device has great stability over time, high photocurrent, good sensitivity and high responsivity under 365 nm wavelength illumination and 0 V, 1 V, 2 V and 3 V applied bias. The responsivity and sensitivity for the fabricated ZnO NRs UV photodetector are 0.015 A W-1, 0.383 A W-1, 1.290 A W-1 and 1.982 A W-1 and 15,030, 42.639, 100.173 and 334.029, respectively, under UV light (365 nm) illumination at (0 V, 1 V, 2 V and 3 V). Originality/value This paper uses the drop-casting technique and the hydrothermal method as simple and low-cost methods to fabricate and improve the ZnO NRs photodetector.