探讨不同交换相关泛函对硫族化合物Ag2O光电特性的影响

IF 1.2 4区 物理与天体物理 Q3 PHYSICS, MULTIDISCIPLINARY Revista Mexicana De Fisica Pub Date : 2023-01-03 DOI:10.31349/revmexfis.69.011004
Hemza Mancer, M. Caid, H. Rached, Zakiya Nakoul, D. Rached
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引用次数: 2

摘要

本研究的主要目的是研究不同交换相关泛函对Ag2O硫族化合物的光电和弹性性能的影响。对于电子结构和光谱,使用Tran-Blaha改进的Becke-Johnson方法与GGA和GGA+U相结合(分别为mBJ-GGA-PBEsol和mBJ-GGA-PBEsol+U)。报道了带隙能量的可用理论和实验数据,以确定是否与我们的结果存在相关性。电子结构表明,我们的化合物在R对称点是直接半导体,带隙为1.22eV,这一值首次与实验值吻合良好。还使用IRelast包评估了弹性常数,这表明该化合物在机械上是稳定的。最后,系统地研究了Ag2O的光学响应,发现Ag2O表现出优异的光学效率。
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Probing the effect of different exchange-correlation functionals on the optoelectronic features of chalcogenide compound Ag2O
The primary goal of this study is to investigate the effect of different exchange-correlation functionals on the optoelectronic and elastic properties of the Ag2O chalcogenide compound. For the electronic structures and optical spectra, the Tran-Blaha modified Becke-Johnson approach combined with GGA and with GGA+U (mBJ-GGA-PBEsol and mBJ-GGA-PBEsol+U, respectively) was used. The available theoretical and experimental data for the bandgap energy were reported to determine whether there is a correlation with our results. The electronic structure revealed that our compound is a direct semiconductor at the R-symmetry point with a bandgap of 1.22 eV, which this value agrees well with the experimental values for the first time. The elastic constants were also evaluated using the IRelast package, which revealed that the compound was mechanically stable. Finally, the optical response was systematically studied, and it was found that Ag2O exhibited excellent optical efficiency.
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来源期刊
Revista Mexicana De Fisica
Revista Mexicana De Fisica 物理-物理:综合
CiteScore
2.20
自引率
11.80%
发文量
87
审稿时长
4-8 weeks
期刊介绍: Durante los últimos años, los responsables de la Revista Mexicana de Física, la Revista Mexicana de Física E y la Revista Mexicana de Física S, hemos realizado esfuerzos para fortalecer la presencia de estas publicaciones en nuestra página Web ( http://rmf.smf.mx).
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