低成本喷雾沉积ZnO纳米薄膜的导电机理

IF 1 4区 材料科学 Journal of Ovonic Research Pub Date : 2023-01-01 DOI:10.15251/jor.2023.191.53
B. Amudhavalli, R. Mariappan, M. Prasath
{"title":"低成本喷雾沉积ZnO纳米薄膜的导电机理","authors":"B. Amudhavalli, R. Mariappan, M. Prasath","doi":"10.15251/jor.2023.191.53","DOIUrl":null,"url":null,"abstract":"The Zinc Oxide (ZnO) thin films have been deposited on glass substrate at different temperature from 300 to 500 o C by nebulizer spray pyrolysis technique. The prepared films were characterized by X-Ray diffraction (XRD), High resolution scanning electron microscope (HRSEM), Energy dispersive analysis by X-rays (EDAX), Photoluminescence (PL), UV-Vis-NIR spectrometer and impedance spectroscopy, respectively. The XRD confirms that the films are polycrystalline in nature with hexagonal wurtzite crystal structure with (002) plane as preferential orientation. The various parameters such as crystallite size, micro strain, and dislocation density were calculated from X-ray diffraction. HR-SEM images show smooth, tiny grains and dense morphology. The PL studies exhibits two emission peaks one at 389 nm corresponding to band gap excitonic emission and another located at 490 nm due to the presence of singly ionized oxygen vacancies. The UV-Vis-NIR spectrometer confirms the possibility of good transparent ZnO films with an average transmission of about ~85-95% in the visible region and optical band gap shifted from 3.37 eV to 3.2 eV with increase in temperature and which is supported by PL study. The semiconductor bahaviour and activation energy of these films have been confirmed by impedance spectroscopy measurements.","PeriodicalId":54394,"journal":{"name":"Journal of Ovonic Research","volume":" ","pages":""},"PeriodicalIF":1.0000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Low-cost nebulizer spray deposited conduction mechanism of thin film ZnO nanoparticles\",\"authors\":\"B. Amudhavalli, R. Mariappan, M. Prasath\",\"doi\":\"10.15251/jor.2023.191.53\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The Zinc Oxide (ZnO) thin films have been deposited on glass substrate at different temperature from 300 to 500 o C by nebulizer spray pyrolysis technique. The prepared films were characterized by X-Ray diffraction (XRD), High resolution scanning electron microscope (HRSEM), Energy dispersive analysis by X-rays (EDAX), Photoluminescence (PL), UV-Vis-NIR spectrometer and impedance spectroscopy, respectively. The XRD confirms that the films are polycrystalline in nature with hexagonal wurtzite crystal structure with (002) plane as preferential orientation. The various parameters such as crystallite size, micro strain, and dislocation density were calculated from X-ray diffraction. HR-SEM images show smooth, tiny grains and dense morphology. The PL studies exhibits two emission peaks one at 389 nm corresponding to band gap excitonic emission and another located at 490 nm due to the presence of singly ionized oxygen vacancies. The UV-Vis-NIR spectrometer confirms the possibility of good transparent ZnO films with an average transmission of about ~85-95% in the visible region and optical band gap shifted from 3.37 eV to 3.2 eV with increase in temperature and which is supported by PL study. The semiconductor bahaviour and activation energy of these films have been confirmed by impedance spectroscopy measurements.\",\"PeriodicalId\":54394,\"journal\":{\"name\":\"Journal of Ovonic Research\",\"volume\":\" \",\"pages\":\"\"},\"PeriodicalIF\":1.0000,\"publicationDate\":\"2023-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Journal of Ovonic Research\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.15251/jor.2023.191.53\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Ovonic Research","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.15251/jor.2023.191.53","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

采用喷雾热解技术,在300~500℃的不同温度下,在玻璃衬底上沉积了氧化锌(ZnO)薄膜。分别用X射线衍射(XRD)、高分辨率扫描电子显微镜(HRSEM)、X射线能量色散分析(EDAX)、光致发光(PL)、紫外-可见-近红外光谱仪和阻抗谱对制备的薄膜进行了表征。XRD结果表明,该薄膜为多晶,具有以(002)面为优先取向的六方纤锌矿晶体结构。通过X射线衍射计算了晶粒尺寸、微应变和位错密度等各种参数。HR-SEM图像显示出光滑、微小的晶粒和致密的形态。PL研究显示出两个发射峰,一个在389 nm对应于带隙激子发射,另一个位于490 nm,这是由于存在单电离的氧空位。UV-Vis-NIR光谱仪证实了良好透明ZnO薄膜的可能性,其在可见光区域的平均透射率约为85-95%,并且随着温度的升高,光学带隙从3.37eV移动到3.2eV,这得到了PL研究的支持。这些薄膜的半导体特性和活化能已通过阻抗谱测量得到证实。
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Low-cost nebulizer spray deposited conduction mechanism of thin film ZnO nanoparticles
The Zinc Oxide (ZnO) thin films have been deposited on glass substrate at different temperature from 300 to 500 o C by nebulizer spray pyrolysis technique. The prepared films were characterized by X-Ray diffraction (XRD), High resolution scanning electron microscope (HRSEM), Energy dispersive analysis by X-rays (EDAX), Photoluminescence (PL), UV-Vis-NIR spectrometer and impedance spectroscopy, respectively. The XRD confirms that the films are polycrystalline in nature with hexagonal wurtzite crystal structure with (002) plane as preferential orientation. The various parameters such as crystallite size, micro strain, and dislocation density were calculated from X-ray diffraction. HR-SEM images show smooth, tiny grains and dense morphology. The PL studies exhibits two emission peaks one at 389 nm corresponding to band gap excitonic emission and another located at 490 nm due to the presence of singly ionized oxygen vacancies. The UV-Vis-NIR spectrometer confirms the possibility of good transparent ZnO films with an average transmission of about ~85-95% in the visible region and optical band gap shifted from 3.37 eV to 3.2 eV with increase in temperature and which is supported by PL study. The semiconductor bahaviour and activation energy of these films have been confirmed by impedance spectroscopy measurements.
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来源期刊
Journal of Ovonic Research
Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
1.60
自引率
20.00%
发文量
77
期刊介绍: Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
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