不同退火方法在n型4H-SiC上的Ni基欧姆接触特性

IF 3.5 3区 工程技术 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY Nami Jishu yu Jingmi Gongcheng/Nanotechnology and Precision Engineering Pub Date : 2021-03-15 DOI:10.1063/10.0003763
Ziwei Zhou, He Weiwei, Zhang Zhenzhong, Sun Jun, A. Schöner, Zedong Zheng
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引用次数: 9

摘要

镍是4H-SiC上一种优良的欧姆接触金属。本文通过对4H-SiC的电学性能和微观结构变化的评估,探讨了镍欧姆接触的形成机理。在高温退火条件下,用X射线衍射可以观察到镍硅化合物的相,接触电阻也发生了变化。设计了一个比较实验,使用X射线衍射和能量色散光谱来阐明使用脉冲激光退火和快速热退火制备的样品之间的欧姆接触材料组成和元素分析的差异。研究发现,在脉冲激光退火制备的样品中,界面处形成了更多的Ni2Si和碳空位,从而产生了更好的欧姆接触特性。
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Characteristics of Ni-based ohmic contacts on n-type 4H-SiC using different annealing methods
Nickel is an excellent ohmic-contact metal on 4H-SiC. This paper discusses the formation mechanism of nickel ohmic contact on 4H-SiC by assessing the electrical properties and microstructural change. Under high-temperature annealing, the phase of nickel-silicon compound can be observed with X-ray diffraction, and the contact resistance also changes. A comparative experiment was designed to use X-ray diffraction and energy-dispersive spectroscopy to clarify the difference of ohmic-contact material composition and elemental analysis between samples prepared using pulsed laser annealing and rapid thermal annealing. It is found that more Ni2Si and carbon vacancies formed at the interface in the sample prepared using pulsed laser annealing, resulting in a better ohmic-contact characteristic.
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来源期刊
Nami Jishu yu Jingmi Gongcheng/Nanotechnology and Precision Engineering
Nami Jishu yu Jingmi Gongcheng/Nanotechnology and Precision Engineering Engineering-Industrial and Manufacturing Engineering
CiteScore
6.50
自引率
0.00%
发文量
1379
审稿时长
14 weeks
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