高导电s掺杂FeSe2-xSx微球,用于实用的钠存储

Shuhao Xiao , Jinxia Jiang , Ying Zhu , Jing Zhang , Hanchao Li , Rui Wu , Xiaobin Niu , Jiaqian Qin , Jun Song Chen
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引用次数: 4

摘要

金属硒化物由于其高理论容量而被探索为有前途的钠存储材料。然而,硒化物的Na+扩散缓慢和电子电导率低仍然阻碍了其实际应用。本文以NH4Fe(SO4)2为Fe和S源,通过自掺杂溶剂热法制备了FeSe2-xSx微球,然后进行气相硒化。密度泛函理论计算结果表明,S掺杂不仅改善了Na的吸附,而且降低了Na原子在S掺杂位点的扩散能垒,同时提高了FeSe2-xSx的电子电导率。FeSe2-xSx微球的无碳性质导致了低比表面积和高振实密度,从而导致85.6%的初始库仑效率。与纯FeSe2相比,这种FeSe2-x Sx在5的高电流密度下提供了373.6 mAh·g−1的高可逆容量​2000次循环后为A·g−1,即使在50​最后,组装了FeSe2-xSx//NVP袋状电池,实现了118的高能量和体积能量密度​Wh·kg−1和272​mWh·cm−3,证实了FeSe2-xSx微球的应用潜力。
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Highly conductive S-doped FeSe2-xSx microsphere with high tap density for practical sodium storage

Metal selenides have been explored as promising sodium storage materials owing to their high theoretical capacity. However, sluggish Na+ diffusion and low electronic conductivity of selenides still hinder their practical applications. Herein, FeSe2-xSx microspheres have been prepared via a self-doping solvothermal method using NH4Fe(SO4)2 as both the Fe and S source, followed by gas phase selenization. The density functional theory calculation results reveal that S doping not only improves the Na adsorption, but also lower the diffusion energy barrier of Na atoms at the S doping sites, at the same time enhance the electronic conductivity of FeSe2-xSx. The carbon-free nature of the FeSe2-xSx microspheres results in a low specific surface area and a high tap density, leading to an initial columbic efficiency of 85.6%. Compared with pure FeSe2, such FeSe2-xSx delivers a high reversible capacity of 373.6 mAh·g−1 at a high current density of 5 ​A·g−1 after 2000 cycles and an enhanced rate performance of 305.8 mAh·g−1 at even 50 ​A·g−1. Finally, the FeSe2-xSx//NVP pouch cells have been assembled, achieving high energy and volumetric energy densities of 118 ​Wh·kg−1 and 272 ​mWh·cm−3, respectively, confirming the potential of applications for the FeSe2-xSx microspheres.

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