用于高级人工光合作用的等离子体半导体

Ning Zhang , Yujie Xiong
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引用次数: 1

摘要

具有高自由载流子浓度的等离子体半导体是一类有吸引力的材料,其表现出类似金属的局域表面等离子体共振(LSPR),用于具有可调谐特征的消光。它们在人工光合作用中的应用在提高太阳能到化学能转换效率的决定因素方面取得了长足的进步,包括光收集、电荷动力学以及表面光化学。在这篇综述中,我们从等离子体半导体中LSPR激发的物理原理和独特特性的基本介绍开始。随后详细总结了激活LSPR响应的掺杂策略以及人工光合作用的内在优点。此外,还简要展望了剩余的挑战和未来前景。我们预计,这篇综述可以提供一个指导方针,拓宽等离子体半导体在探索可持续等离子体辅助光化学应用方面的视野。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Plasmonic semiconductors for advanced artificial photosynthesis

Plasmonic semiconductors with high free carrier concentration is a class of attractive materials that exhibit metal-like localized surface plasmon resonance (LSPR) for light extinction with tunable features. Their applications in artificial photosynthesis have witnessed considerable advances in terms of the determinants for solar-to-chemical energy conversion efficiency improvement, including light harvesting, charge dynamics as well as surface photochemistry. In this review, we begin with the fundamental introduction to physical principles and unique characters of LSPR excitation in plasmonic semiconductors. The doping strategies for activating LSPR response and the intrinsic merits in artificial photosynthesis are subsequently summarized in detail. In addition, the remaining challenging and future perspectives are briefly outlooked. We anticipate that this review can provide a tutorial guideline to broaden the horizons for plasmonic semiconductors in the exploration of sustainable plasmon-assisted photochemistry application.

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