{"title":"微波合成的γ-WO3纳米棒具有高电流密度和扩散特性","authors":"Shreya, Peeyush Phogat, Ranjana Jha, Sukhvir Singh","doi":"10.1007/s11243-023-00533-y","DOIUrl":null,"url":null,"abstract":"<div><p>The synthesis of monoclinic (γ) tungsten oxide (WO<sub>3</sub>) nanorods via facile Microwave-assisted hydrothermal route is reported in the present work. The structural characterization of the as-synthesized material by using X-ray diffraction and Fourier-transform infrared spectroscopy confirms the formation of crystalline WO<sub>3</sub> phase. The morphology and microstructural study along with elemental composition of the material as obtained by scanning electron microscopy and transmission electron microscopy, respectively, reveals the generation of one-dimensional WO<sub>3</sub> nanorods. The nanorods show substantial absorbance in the ultraviolet (UV) region with the bandgap and refractive index of 2.7 eV and 2.48, respectively. Here, the low value of bandgap without adding any catalyst or co-catalyst is attributed to the microwave treatment. The electrochemical properties of WO<sub>3</sub> are studied using cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). The nanorods show high current density at different potentials and diffusion-controlled behavior as exhibited by Warburg impedance. The anodic as well as cathodic peak current values are seen to be increased after the deposition of the thin film of FTO substrate indicating the better diffusion of ions in the electrolyte. The capacitive and diffusive contribution of the thin film is investigated at various scan rates using Dunn’s model which shows that the diffusive contribution of the thin film is 120 times more than the capacitive contribution confirming the diffusive behavior of the thin film. The exchange current density of the deposited film is calculated which is found to have higher value than that of bare FTO. <i>I</i>–<i>V</i> characteristics of WO<sub>3</sub> are compared with that of bare FTO which reveals the smaller resistance offered by WO<sub>3</sub> film. The equivalent circuit as obtained from Nyquist plot is used to estimate the resistance of electrolyte, film and charge transfer resistance along with the double-layer capacitance and Warburg impedance. Further, bode plot is analyzed to study the phase shift and thus the diffusive behavior of the material.</p></div>","PeriodicalId":803,"journal":{"name":"Transition Metal Chemistry","volume":"48 3","pages":"167 - 183"},"PeriodicalIF":1.6000,"publicationDate":"2023-05-26","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Microwave-synthesized γ-WO3 nanorods exhibiting high current density and diffusion characteristics\",\"authors\":\"Shreya, Peeyush Phogat, Ranjana Jha, Sukhvir Singh\",\"doi\":\"10.1007/s11243-023-00533-y\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>The synthesis of monoclinic (γ) tungsten oxide (WO<sub>3</sub>) nanorods via facile Microwave-assisted hydrothermal route is reported in the present work. The structural characterization of the as-synthesized material by using X-ray diffraction and Fourier-transform infrared spectroscopy confirms the formation of crystalline WO<sub>3</sub> phase. The morphology and microstructural study along with elemental composition of the material as obtained by scanning electron microscopy and transmission electron microscopy, respectively, reveals the generation of one-dimensional WO<sub>3</sub> nanorods. The nanorods show substantial absorbance in the ultraviolet (UV) region with the bandgap and refractive index of 2.7 eV and 2.48, respectively. Here, the low value of bandgap without adding any catalyst or co-catalyst is attributed to the microwave treatment. The electrochemical properties of WO<sub>3</sub> are studied using cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). The nanorods show high current density at different potentials and diffusion-controlled behavior as exhibited by Warburg impedance. The anodic as well as cathodic peak current values are seen to be increased after the deposition of the thin film of FTO substrate indicating the better diffusion of ions in the electrolyte. The capacitive and diffusive contribution of the thin film is investigated at various scan rates using Dunn’s model which shows that the diffusive contribution of the thin film is 120 times more than the capacitive contribution confirming the diffusive behavior of the thin film. The exchange current density of the deposited film is calculated which is found to have higher value than that of bare FTO. <i>I</i>–<i>V</i> characteristics of WO<sub>3</sub> are compared with that of bare FTO which reveals the smaller resistance offered by WO<sub>3</sub> film. The equivalent circuit as obtained from Nyquist plot is used to estimate the resistance of electrolyte, film and charge transfer resistance along with the double-layer capacitance and Warburg impedance. Further, bode plot is analyzed to study the phase shift and thus the diffusive behavior of the material.</p></div>\",\"PeriodicalId\":803,\"journal\":{\"name\":\"Transition Metal Chemistry\",\"volume\":\"48 3\",\"pages\":\"167 - 183\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2023-05-26\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Transition Metal Chemistry\",\"FirstCategoryId\":\"92\",\"ListUrlMain\":\"https://link.springer.com/article/10.1007/s11243-023-00533-y\",\"RegionNum\":4,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"CHEMISTRY, INORGANIC & NUCLEAR\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Transition Metal Chemistry","FirstCategoryId":"92","ListUrlMain":"https://link.springer.com/article/10.1007/s11243-023-00533-y","RegionNum":4,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"CHEMISTRY, INORGANIC & NUCLEAR","Score":null,"Total":0}
Microwave-synthesized γ-WO3 nanorods exhibiting high current density and diffusion characteristics
The synthesis of monoclinic (γ) tungsten oxide (WO3) nanorods via facile Microwave-assisted hydrothermal route is reported in the present work. The structural characterization of the as-synthesized material by using X-ray diffraction and Fourier-transform infrared spectroscopy confirms the formation of crystalline WO3 phase. The morphology and microstructural study along with elemental composition of the material as obtained by scanning electron microscopy and transmission electron microscopy, respectively, reveals the generation of one-dimensional WO3 nanorods. The nanorods show substantial absorbance in the ultraviolet (UV) region with the bandgap and refractive index of 2.7 eV and 2.48, respectively. Here, the low value of bandgap without adding any catalyst or co-catalyst is attributed to the microwave treatment. The electrochemical properties of WO3 are studied using cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). The nanorods show high current density at different potentials and diffusion-controlled behavior as exhibited by Warburg impedance. The anodic as well as cathodic peak current values are seen to be increased after the deposition of the thin film of FTO substrate indicating the better diffusion of ions in the electrolyte. The capacitive and diffusive contribution of the thin film is investigated at various scan rates using Dunn’s model which shows that the diffusive contribution of the thin film is 120 times more than the capacitive contribution confirming the diffusive behavior of the thin film. The exchange current density of the deposited film is calculated which is found to have higher value than that of bare FTO. I–V characteristics of WO3 are compared with that of bare FTO which reveals the smaller resistance offered by WO3 film. The equivalent circuit as obtained from Nyquist plot is used to estimate the resistance of electrolyte, film and charge transfer resistance along with the double-layer capacitance and Warburg impedance. Further, bode plot is analyzed to study the phase shift and thus the diffusive behavior of the material.
期刊介绍:
Transition Metal Chemistry is an international journal designed to deal with all aspects of the subject embodied in the title: the preparation of transition metal-based molecular compounds of all kinds (including complexes of the Group 12 elements), their structural, physical, kinetic, catalytic and biological properties, their use in chemical synthesis as well as their application in the widest context, their role in naturally occurring systems etc.
Manuscripts submitted to the journal should be of broad appeal to the readership and for this reason, papers which are confined to more specialised studies such as the measurement of solution phase equilibria or thermal decomposition studies, or papers which include extensive material on f-block elements, or papers dealing with non-molecular materials, will not normally be considered for publication. Work describing new ligands or coordination geometries must provide sufficient evidence for the confident assignment of structural formulae; this will usually take the form of one or more X-ray crystal structures.