Masud Rana Sk , Shubham Pande , Franz Müller , Yannick Raffel , Maximilian Lederer , Luca Pirro , Sven Beyer , Konrad Seidel , Thomas Kämpfe , Sourav De , Bhaswar Chakrabarti
{"title":"HfO2/SiO2界面的固定电荷：对FeFET存储窗口的影响","authors":"Masud Rana Sk , Shubham Pande , Franz Müller , Yannick Raffel , Maximilian Lederer , Luca Pirro , Sven Beyer , Konrad Seidel , Thomas Kämpfe , Sourav De , Bhaswar Chakrabarti","doi":"10.1016/j.memori.2023.100050","DOIUrl":null,"url":null,"abstract":"<div><p>In this article, the impact of interfacial fixed charges on the memory window (MW) of HfO<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>-based ferroelectric field-effect transistor (FeFET) is investigated using technology computer-aided design (TCAD) device simulations. We have considered the presence of fixed charges at the interface between the ferroelectric layer (FE) and the interlayer dielectric (IL) of FeFET with metal/ferroelectric/interlayer/Si (MFIS) gate structure. Our study indicates that the presence of fixed charges affects the polarization and corresponding depolarization field in the ferroelectric. Positive and negative interface charges can align the polarization direction. The MW degradation is observed with the increase in the fixed charge concentration (<span><math><msub><mrow><mi>Q</mi></mrow><mrow><mi>f</mi></mrow></msub></math></span>).</p></div>","PeriodicalId":100915,"journal":{"name":"Memories - Materials, Devices, Circuits and Systems","volume":"4 ","pages":"Article 100050"},"PeriodicalIF":0.0000,"publicationDate":"2023-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET\",\"authors\":\"Masud Rana Sk , Shubham Pande , Franz Müller , Yannick Raffel , Maximilian Lederer , Luca Pirro , Sven Beyer , Konrad Seidel , Thomas Kämpfe , Sourav De , Bhaswar Chakrabarti\",\"doi\":\"10.1016/j.memori.2023.100050\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>In this article, the impact of interfacial fixed charges on the memory window (MW) of HfO<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>-based ferroelectric field-effect transistor (FeFET) is investigated using technology computer-aided design (TCAD) device simulations. We have considered the presence of fixed charges at the interface between the ferroelectric layer (FE) and the interlayer dielectric (IL) of FeFET with metal/ferroelectric/interlayer/Si (MFIS) gate structure. Our study indicates that the presence of fixed charges affects the polarization and corresponding depolarization field in the ferroelectric. Positive and negative interface charges can align the polarization direction. The MW degradation is observed with the increase in the fixed charge concentration (<span><math><msub><mrow><mi>Q</mi></mrow><mrow><mi>f</mi></mrow></msub></math></span>).</p></div>\",\"PeriodicalId\":100915,\"journal\":{\"name\":\"Memories - Materials, Devices, Circuits and Systems\",\"volume\":\"4 \",\"pages\":\"Article 100050\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2023-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Memories - Materials, Devices, Circuits and Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2773064623000270\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Memories - Materials, Devices, Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2773064623000270","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fixed charges at the HfO2/SiO2 interface: Impact on the memory window of FeFET
In this article, the impact of interfacial fixed charges on the memory window (MW) of HfO-based ferroelectric field-effect transistor (FeFET) is investigated using technology computer-aided design (TCAD) device simulations. We have considered the presence of fixed charges at the interface between the ferroelectric layer (FE) and the interlayer dielectric (IL) of FeFET with metal/ferroelectric/interlayer/Si (MFIS) gate structure. Our study indicates that the presence of fixed charges affects the polarization and corresponding depolarization field in the ferroelectric. Positive and negative interface charges can align the polarization direction. The MW degradation is observed with the increase in the fixed charge concentration ().
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