Electric-field-induced quasi-phase-matched three-wave mixing in silicon-based superlattice-on-insulator integrated circuits

We present a theoretical investigation, based on the tight-binding Hamiltonian, of efficient electric-field-induced three-waves mixing (EFIM) in an undoped lattice-matched short-period superlattice (SL) that integrates quasi-phase-matched (QPM) SL straight waveguides and SL racetrack resonators on an opto-electronic chip. Periodically reversed DC voltage is applied to electrode segments on each side of the strip waveguide. The spectra of ${\chi }_{\mathrm{xxxx}}^{\left(3\right)}$ and of the linear susceptibility have been simulated as a function of the number of the atomic monolayers for “non-relaxed” heterointerfaces, and by considering all the transitions between valence and conduction bands. The large obtained values of${\chi }_{\mathrm{xxxx}}^{\left(3\right)}$ make the ${\left(\mathrm{ZnS}\right)}_3/{\left(S{i}_2\right)}_3$ short-period SL a good candidate for realizing large effective second-order nonlinearity, enabling future high-performance of the SLOI PICs and OEICs in the 1000-nm and 2000-nm wavelengths ranges. We have made detailed calculations of the efficiency of second-harmonic generation and of the performances of the optical parametric oscillator (OPO). The results indicate that the ${\left(\mathrm{ZnS}\right)}_N/{\left(S{i}_2\right)}_M$ QPM is competitive with present PPLN technologies and is practical for classical and quantum applications.