机械去除石墨烯表面残留物的TEM表征

Q3 Immunology and Microbiology Applied Microscopy Pub Date : 2020-11-30 DOI:10.1186/s42649-020-00048-1
Dong-Gyu Kim, Sol Lee, Kwanpyo Kim
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引用次数: 5

摘要

二维晶体表面的污染严重限制了二维晶体的基础研究和应用。在二维晶体中,表面残馀会引起不受控制的掺杂和载流子散射,而在机械组装的二维垂直异质结构中被捕获的残馀往往会阻碍堆叠层之间的耦合。开发一种可以减少二维晶体表面残留的工艺是很重要的。在这项研究中,我们探索了使用原子力显微镜(AFM)去除二维晶体表面残留物的方法。通过各种透射电子显微镜(TEM)研究,我们证实石墨烯样品的表面残留物可以通过接触模式AFM扫描有效去除。机械清洗过程大大增加了无残留物区域,从而可以获得石墨烯层的高分辨率成像。我们相信,我们的机械清洗工艺可以用来制备高质量的二维晶体样品,表面残留物最少。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Mechanical removal of surface residues on graphene for TEM characterizations

Contamination on two-dimensional (2D) crystal surfaces poses serious limitations on fundamental studies and applications of 2D crystals. Surface residues induce uncontrolled doping and charge carrier scattering in 2D crystals, and trapped residues in mechanically assembled 2D vertical heterostructures often hinder coupling between stacked layers. Developing a process that can reduce the surface residues on 2D crystals is important. In this study, we explored the use of atomic force microscopy (AFM) to remove surface residues from 2D crystals. Using various transmission electron microscopy (TEM) investigations, we confirmed that surface residues on graphene samples can be effectively removed via contact-mode AFM scanning. The mechanical cleaning process dramatically increases the residue-free areas, where high-resolution imaging of graphene layers can be obtained. We believe that our mechanical cleaning process can be utilized to prepare high-quality 2D crystal samples with minimum surface residues.

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来源期刊
Applied Microscopy
Applied Microscopy Immunology and Microbiology-Applied Microbiology and Biotechnology
CiteScore
3.40
自引率
0.00%
发文量
10
审稿时长
10 weeks
期刊介绍: Applied Microscopy is a peer-reviewed journal sponsored by the Korean Society of Microscopy. The journal covers all the interdisciplinary fields of technological developments in new microscopy methods and instrumentation and their applications to biological or materials science for determining structure and chemistry. ISSN: 22875123, 22874445.
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