粗糙度和表面缺陷的差异对聚合物薄膜介电强度的影响

IF 3.8 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC IET Nanodielectrics Pub Date : 2020-02-10 DOI:10.1049/iet-nde.2019.0031
Daniel Qi Tan
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引用次数: 19

摘要

提高聚合物薄膜的介电强度一直是一个关键的主题,因为它直接关系到薄膜电容器和绝缘胶带等相关部件的能量密度的提高。具有较高粗糙度和表面缺陷的介电膜会在介电膜和金属化聚合物电极之间的界面处形成气隙,从而导致不准确的介电强度。发现由于粗糙度造成的气隙导致介电强度比使用沉积金属在介电薄膜(整体电极)上高25%。结果表明,积分电极法是一种较好的测试薄、粗介质薄膜真实介电强度的方法。另一方面,表面缺陷由于对局域电场和电荷注入的贡献而导致介电强度的降低。表面缺陷的有害影响可以通过将薄膜浸入油中或在薄膜上涂上氧化层来抑制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

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Differentiation of roughness and surface defect impact on dielectric strength of polymeric thin films

Increasing the dielectric strength of polymer films has been a key theme as it is directly responsible for increasing energy density of relevant components such as film capacitors and insulation tapes. Dielectric films with higher roughness and surface defects are subject to the formation of an air gap at the interface between dielectric film and metallised polymer electrodes, which results in inaccurate dielectric strength. The air gap due to roughness was found to result in dielectric strength of 25% higher than that using depositing metal on dielectric films (integral electrode). The integral electrode method is proven to be a better way to test the genuine dielectric strength of thin and rough dielectric films. Surface defects, on the other hand, were revealed to cause lowering of dielectric strength because of their contribution to the localised electric field and charge injection. The detrimental effect of surface defects can be suppressed by submerging the film in oil or coating the film with an oxide layer.

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来源期刊
IET Nanodielectrics
IET Nanodielectrics Materials Science-Materials Chemistry
CiteScore
5.60
自引率
3.70%
发文量
7
审稿时长
21 weeks
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