高速率氧化硅涂层的微波等离子体增强CVD

IF 1.2 4区材料科学 Q4 ELECTROCHEMISTRY Transactions of The Institute of Metal Finishing Pub Date : 1998-01-01 DOI:10.1080/00202967.1998.11871184

O. Takai, T. Honjo

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引用次数: 0

摘要

摘要以有机硅化合物甲基三甲氧基硅烷为气源，研究了微波等离子体增强CVD制备高速率氧化硅涂层。该透明硬膜可以1 μm/min的高速率沉积在衬底上。在低于100pa的压力下制备的薄膜的组成与二氧化硅相似。采用XRD、FT-IR、XPS和AES对膜进行了分析。

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Microwave Plasma-Enhanced CVD for High Rate Coatings of Silicon Oxide

SummaryMicrowave plasma-enhanced CVD has been studied for the high rate coatings of silicon oxide using methyltrimethoxysilane, an organosilicon compound, and oxygen as gas sources. The transparent hard films could be deposited onto substrates at the high rate of about 1 μm/min. The composition of the films prepared at pressures below 100 Pa was similar to silicon dioxide. Analyses of the films were carried out by using XRD, FT-IR, XPS and AES.

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来源期刊

Transactions of The Institute of Metal Finishing 工程技术-材料科学：膜

CiteScore

3.40

自引率

10.50%

发文量

审稿时长

3 months

期刊介绍： Transactions of the Institute of Metal Finishing provides international peer-reviewed coverage of all aspects of surface finishing and surface engineering, from fundamental research to in-service applications. The coverage is principally concerned with the application of surface engineering and coating technologies to enhance the properties of engineering components and assemblies. These techniques include electroplating and electroless plating and their pre- and post-treatments, thus embracing all cleaning pickling and chemical conversion processes, and also complementary processes such as anodising. Increasingly, other processes are becoming important particularly regarding surface profile, texture, opacity, contact integrity, etc.