{"title":"考虑排斥性位阻和陷阱效应的i型TFET生物传感器灵敏度分析","authors":"Shreyas Tiwari;Rajesh Saha","doi":"10.1109/TNANO.2023.3309411","DOIUrl":null,"url":null,"abstract":"In this work, a dielectric modulated (DM) I-shape Tunnel FET based label-free biosensor has been explored on considering both the repulsive steric effect (RSE) and trap effect in the TCAD simulator. The gate oxide layer is aligned over the N\n<sup>+</sup>\n pocket on both side source regions to enhance the tunneling rate. Moreover, the impact of trap impurities and steric effects are reported by extracting the drain current (I\n<sub>D</sub>\n), energy band diagram, surface potential (ψ), current ratio, and drain current sensitivity (S\n<sub>ION</sub>\n) for the variation in length of cavity (L\n<sub>C</sub>\n), thickness of cavity (T\n<sub>C</sub>\n), and supply voltage (V\n<sub>DS</sub>\n). Furthermore, the noise assessment parameter has been explored on considering of same non-idealistic effects. It is seen that on considering RSE and trap impurities, the streptavidin biomolecules report an error in sensitivity (60.1%)\n<sub>NoTrap</sub>\n and (108.6%)\n<sub>Trap</sub>\n.","PeriodicalId":449,"journal":{"name":"IEEE Transactions on Nanotechnology","volume":"22 ","pages":"518-524"},"PeriodicalIF":2.1000,"publicationDate":"2023-08-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Sensitivity Analysis of I-Shape TFET Biosensor Considering Repulsive Steric and Trap Effects\",\"authors\":\"Shreyas Tiwari;Rajesh Saha\",\"doi\":\"10.1109/TNANO.2023.3309411\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, a dielectric modulated (DM) I-shape Tunnel FET based label-free biosensor has been explored on considering both the repulsive steric effect (RSE) and trap effect in the TCAD simulator. The gate oxide layer is aligned over the N\\n<sup>+</sup>\\n pocket on both side source regions to enhance the tunneling rate. Moreover, the impact of trap impurities and steric effects are reported by extracting the drain current (I\\n<sub>D</sub>\\n), energy band diagram, surface potential (ψ), current ratio, and drain current sensitivity (S\\n<sub>ION</sub>\\n) for the variation in length of cavity (L\\n<sub>C</sub>\\n), thickness of cavity (T\\n<sub>C</sub>\\n), and supply voltage (V\\n<sub>DS</sub>\\n). Furthermore, the noise assessment parameter has been explored on considering of same non-idealistic effects. It is seen that on considering RSE and trap impurities, the streptavidin biomolecules report an error in sensitivity (60.1%)\\n<sub>NoTrap</sub>\\n and (108.6%)\\n<sub>Trap</sub>\\n.\",\"PeriodicalId\":449,\"journal\":{\"name\":\"IEEE Transactions on Nanotechnology\",\"volume\":\"22 \",\"pages\":\"518-524\"},\"PeriodicalIF\":2.1000,\"publicationDate\":\"2023-08-28\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Nanotechnology\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10233095/\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Nanotechnology","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10233095/","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Sensitivity Analysis of I-Shape TFET Biosensor Considering Repulsive Steric and Trap Effects
In this work, a dielectric modulated (DM) I-shape Tunnel FET based label-free biosensor has been explored on considering both the repulsive steric effect (RSE) and trap effect in the TCAD simulator. The gate oxide layer is aligned over the N
+
pocket on both side source regions to enhance the tunneling rate. Moreover, the impact of trap impurities and steric effects are reported by extracting the drain current (I
D
), energy band diagram, surface potential (ψ), current ratio, and drain current sensitivity (S
ION
) for the variation in length of cavity (L
C
), thickness of cavity (T
C
), and supply voltage (V
DS
). Furthermore, the noise assessment parameter has been explored on considering of same non-idealistic effects. It is seen that on considering RSE and trap impurities, the streptavidin biomolecules report an error in sensitivity (60.1%)
NoTrap
and (108.6%)
Trap
.
期刊介绍：
The IEEE Transactions on Nanotechnology is devoted to the publication of manuscripts of archival value in the general area of nanotechnology, which is rapidly emerging as one of the fastest growing and most promising new technological developments for the next generation and beyond.
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