离子液体中铝在硅上的电镀

Wen-cheng Sun, Xiaofei Han, M. Tao
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引用次数: 6

摘要

在室温以上的离子液体中,在硅(Si)衬底上电镀铝(Al),用于硅片太阳能电池的金属化。电解质由无水氯化铝和1-乙基-3-甲基咪唑四氯铝酸盐混合制备。电镀是用恒流电解的方法进行的。表征了Al镀层的结构和组成特性,镀层的片状电阻受预焙条件、沉积温度和沉积后退火条件的影响。结果发现,在Si衬底上可以直接获得电阻率在10[上标−6]Ω-cm范围内的致密、粘附的Al沉积。
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Electroplating of Aluminium on Silicon in an Ionic Liquid
Electroplating of aluminum (Al) on silicon (Si) substrates has been demonstrated in an above-room-temperature ionic liquid for the metallization of wafer-Si solar cells. The electrolyte was prepared by mixing anhydrous aluminum chloride and 1-ethyl-3-methylimidazolium tetrachloroaluminate. The plating was carried out by means of galvanostatic electrolysis. The structural and compositional properties of the Al deposits were characterized, and the sheet resistance of the deposits revealed the effects of pre-bake conditions, deposition temperature, and post-deposition annealing conditions. It was found that dense, adherent Al deposits with resistivity in the high 10[superscript −6] Ω-cm range can be reproducibly obtained directly on Si substrates.
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来源期刊
ECS Electrochemistry Letters
ECS Electrochemistry Letters ELECTROCHEMISTRY-MATERIALS SCIENCE, MULTIDISCIPLINARY
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