用镍钨合金填充微孔降低电子电路互连的热膨胀系数

Yu-Tien Lin, Hsin-Man Huang, Hsin-Wei Wang, W. Dow, Jing-Yuan Lin, Ping-He Chang, Horn-Chin Lee
{"title":"用镍钨合金填充微孔降低电子电路互连的热膨胀系数","authors":"Yu-Tien Lin, Hsin-Man Huang, Hsin-Wei Wang, W. Dow, Jing-Yuan Lin, Ping-He Chang, Horn-Chin Lee","doi":"10.1149/2.0031509EEL","DOIUrl":null,"url":null,"abstract":"A nickel-tungsten alloy plating formula was developed to electrochemically fill the microvias of printed circuit boards and the through-silicon vias (TSVs) of wafers. The plating solution was composed of Ni(SO3NH2)2, citric acid, sodium citrate, Na2WO4, chloride ions, and 2-mercapto-5-benzimidazolesulfonic acid. A void-free Ni-W superfilling of a microvia and a TSV were achieved. The tungsten content in the filled alloy varied from 1.5 atom% to 5.5 atom%, depending on the plating temperature. The coefficient of thermal expansion of the filled Ni-W was theoretically calculated according the tungsten content, which was lower than that of copper. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any","PeriodicalId":11470,"journal":{"name":"ECS Electrochemistry Letters","volume":"4 1","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2015-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1149/2.0031509EEL","citationCount":"9","resultStr":"{\"title\":\"Microvia Filling with Nickel-Tungsten Alloy to Decrease the Coefficient of Thermal Expansion of Electronic Circuit Interconnections\",\"authors\":\"Yu-Tien Lin, Hsin-Man Huang, Hsin-Wei Wang, W. Dow, Jing-Yuan Lin, Ping-He Chang, Horn-Chin Lee\",\"doi\":\"10.1149/2.0031509EEL\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A nickel-tungsten alloy plating formula was developed to electrochemically fill the microvias of printed circuit boards and the through-silicon vias (TSVs) of wafers. The plating solution was composed of Ni(SO3NH2)2, citric acid, sodium citrate, Na2WO4, chloride ions, and 2-mercapto-5-benzimidazolesulfonic acid. A void-free Ni-W superfilling of a microvia and a TSV were achieved. The tungsten content in the filled alloy varied from 1.5 atom% to 5.5 atom%, depending on the plating temperature. The coefficient of thermal expansion of the filled Ni-W was theoretically calculated according the tungsten content, which was lower than that of copper. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any\",\"PeriodicalId\":11470,\"journal\":{\"name\":\"ECS Electrochemistry Letters\",\"volume\":\"4 1\",\"pages\":\"\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1149/2.0031509EEL\",\"citationCount\":\"9\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ECS Electrochemistry Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1149/2.0031509EEL\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ECS Electrochemistry Letters","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1149/2.0031509EEL","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

摘要

开发了一种电镀镍钨合金的配方,用于电化学填充印刷电路板的微孔和晶圆片的硅通孔。镀液由Ni(SO3NH2)2、柠檬酸、柠檬酸钠、Na2WO4、氯离子和2-巯基-5-苯并咪唑磺酸组成。实现了微孔和TSV的无空隙镍钨填充。根据电镀温度的不同,填充合金中的钨含量在1.5 ~ 5.5原子%之间变化。从理论上计算了填充后的Ni-W的热膨胀系数,其中钨的含量低于铜的含量。©作者2015。由ECS出版。这是一篇在知识共享署名4.0许可(CC BY, http://creativecommons.org/licenses/by/4.0/)的条款下发布的开放获取文章,该许可允许在任何情况下不受限制地重复使用该作品
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Microvia Filling with Nickel-Tungsten Alloy to Decrease the Coefficient of Thermal Expansion of Electronic Circuit Interconnections
A nickel-tungsten alloy plating formula was developed to electrochemically fill the microvias of printed circuit boards and the through-silicon vias (TSVs) of wafers. The plating solution was composed of Ni(SO3NH2)2, citric acid, sodium citrate, Na2WO4, chloride ions, and 2-mercapto-5-benzimidazolesulfonic acid. A void-free Ni-W superfilling of a microvia and a TSV were achieved. The tungsten content in the filled alloy varied from 1.5 atom% to 5.5 atom%, depending on the plating temperature. The coefficient of thermal expansion of the filled Ni-W was theoretically calculated according the tungsten content, which was lower than that of copper. © The Author(s) 2015. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution 4.0 License (CC BY, http://creativecommons.org/licenses/by/4.0/), which permits unrestricted reuse of the work in any
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
ECS Electrochemistry Letters
ECS Electrochemistry Letters ELECTROCHEMISTRY-MATERIALS SCIENCE, MULTIDISCIPLINARY
自引率
0.00%
发文量
0
期刊最新文献
Periodic Lateral Root Priming: What Makes It Tick? Preparation of Mesoporous Si@PAN Electrodes for Li-Ion Batteries via the In-Situ Polymerization of PAN Effect of Clamping Pressure and Temperature on the Performance of a CuCl(aq)/HCl(aq) Electrolyzer Carbon-Free AZO/Ru Cathode for Li-Air Batteries Electrochemical Characterization of Iodide Ions Adsorption Kinetics at Bi(111) Electrode from Three-Component Ionic Liquids Mixtures
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1