5mhz - 100w LLC谐振DC-DC变换器物理设计与实现的考虑

IF 1.3 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC Active and Passive Electronic Components Pub Date : 2016-01-01 DOI:10.1155/2016/4027406
Akinori Hariya, K. Matsuura, H. Yanagi, S. Tomioka, Y. Ishizuka, T. Ninomiya
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引用次数: 2

摘要

近年来,人们对高功率密度、高功率效率和宽调节范围的隔离型DC-DC变换器提出了更高的要求。本文介绍了宽调节范围mhz级LLC谐振DC-DC变换器的物理设计与实现。电路参数设计为3-5 mhz级开关频率。利用推导方程和Maxwell 3D有限元法对平面变压器的物理参数和尺寸进行了优化。利用氮化镓高电子迁移率晶体管(GaN-HEMTs)进行了LLC谐振DC-DC变换器的实验;输入电压为42 ~ 53 V,参考输出电压为12 V,负载电流为8 A,最大开关频率约为5 MHz,电路总体积4.1 cm3,样机变换器功率密度为24.4 W/cc。
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Considerations of Physical Design and Implementation for 5 MHz-100 W LLC Resonant DC-DC Converters
Recently, high power-density, high power-efficiency, and wide regulation range isolated DC-DC converters have been required. This paper presents considerations of physical design and implementation for wide regulation range MHz-level LLC resonant DC-DC converters. The circuit parameters are designed with 3–5 MHz-level switching frequency. Also, the physical parameters and the size of the planar transformer are optimized by using derived equations and finite element method (FEM) with Maxwell 3D. Some experiments are done with prototype LLC resonant DC-DC converter using gallium nitride high electron mobility transistors (GaN-HEMTs); the input voltage is 42–53 V, the reference output voltage is 12 V, the load current is 8 A, the maximum switching frequency is about 5 MHz, the total volume of the circuit is 4.1 cm3, and the power density of the prototype converter is 24.4 W/cc.
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来源期刊
Active and Passive Electronic Components
Active and Passive Electronic Components ENGINEERING, ELECTRICAL & ELECTRONIC-
CiteScore
1.30
自引率
0.00%
发文量
1
审稿时长
13 weeks
期刊介绍: Active and Passive Electronic Components is an international journal devoted to the science and technology of all types of electronic components. The journal publishes experimental and theoretical papers on topics such as transistors, hybrid circuits, integrated circuits, MicroElectroMechanical Systems (MEMS), sensors, high frequency devices and circuits, power devices and circuits, non-volatile memory technologies such as ferroelectric and phase transition memories, and nano electronics devices and circuits.
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