n型低成本冶金硅的HIT太阳能电池

Q3 Engineering Advances in Optoelectronics Pub Date : 2018-01-18 DOI:10.1155/2018/7368175

Xing Yang, Jiangtao Bian, Zhengxin Liu, Li Shuai, Chao Chen, Song He

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引用次数: 2

摘要

在156mm × 156mm的冶金硅片上，异质结本质薄层(HIT)太阳能电池的转换效率达到20.23%。应用AFORS-HET软件模拟，研究了含冶金硅的HIT太阳能电池的杂质浓度、补偿水平及其对电池性能的影响。冶金硅材料中少量的杂质对太阳能电池的性能是无害的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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HIT Solar Cells with N-Type Low-Cost Metallurgical Si

A conversion efficiency of 20.23% of heterojunction with intrinsic thin layer (HIT) solar cell on 156 mm × 156 mm metallurgical Si wafer has been obtained. Applying AFORS-HET software simulation, HIT solar cell with metallurgical Si was investigated with regard to impurity concentration, compensation level, and their impacts on cell performance. It is known that a small amount of impurity in metallurgical Si materials is not harmful to solar cell properties.

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来源期刊

Advances in Optoelectronics ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

1.30

自引率

0.00%

发文量

期刊介绍： Advances in OptoElectronics is a peer-reviewed, open access journal that publishes original research articles as well as review articles in all areas of optoelectronics.