{"title":"用椭偏光谱法研究了氢化ZnO-Ga薄膜的光学性质","authors":"Y. Jiao, Gao Mei-zhen","doi":"10.11972/j.issn.1001-9014.2016.01.002","DOIUrl":null,"url":null,"abstract":"The effects of Ga doping on structural, electrical, and optical properties of hydrogenated ZnO-Ga (GZO) thin films deposited by sol-gel technique have been investigated. From the X-ray diffraction observations, the films doped with different gallium concentrations were found to be pure wurtzite-structured ZnO. The electrical properties of the hydrogen -annealed films were improved and a lowest resistivity of 3. 410 x 10(-3) Omega.cm was obtained. The refractive index and extinction coefficient of ZnO-Ga thin films were determined in the range of 270 1600 nm by varying angle spectroscopic ellipsometry (VASE). The simulation was carried out using a double oscillator model, which includes the Psemi-MO equation and the rho-tau Drude equation.","PeriodicalId":50181,"journal":{"name":"红外与毫米波学报","volume":null,"pages":null},"PeriodicalIF":0.6000,"publicationDate":"2016-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Optical properties of hydrogenated ZnO-Ga thin films studied by spectroscopic ellipsometry\",\"authors\":\"Y. Jiao, Gao Mei-zhen\",\"doi\":\"10.11972/j.issn.1001-9014.2016.01.002\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effects of Ga doping on structural, electrical, and optical properties of hydrogenated ZnO-Ga (GZO) thin films deposited by sol-gel technique have been investigated. From the X-ray diffraction observations, the films doped with different gallium concentrations were found to be pure wurtzite-structured ZnO. The electrical properties of the hydrogen -annealed films were improved and a lowest resistivity of 3. 410 x 10(-3) Omega.cm was obtained. The refractive index and extinction coefficient of ZnO-Ga thin films were determined in the range of 270 1600 nm by varying angle spectroscopic ellipsometry (VASE). The simulation was carried out using a double oscillator model, which includes the Psemi-MO equation and the rho-tau Drude equation.\",\"PeriodicalId\":50181,\"journal\":{\"name\":\"红外与毫米波学报\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.6000,\"publicationDate\":\"2016-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"红外与毫米波学报\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://doi.org/10.11972/j.issn.1001-9014.2016.01.002\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q4\",\"JCRName\":\"OPTICS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"红外与毫米波学报","FirstCategoryId":"101","ListUrlMain":"https://doi.org/10.11972/j.issn.1001-9014.2016.01.002","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"OPTICS","Score":null,"Total":0}
Optical properties of hydrogenated ZnO-Ga thin films studied by spectroscopic ellipsometry
The effects of Ga doping on structural, electrical, and optical properties of hydrogenated ZnO-Ga (GZO) thin films deposited by sol-gel technique have been investigated. From the X-ray diffraction observations, the films doped with different gallium concentrations were found to be pure wurtzite-structured ZnO. The electrical properties of the hydrogen -annealed films were improved and a lowest resistivity of 3. 410 x 10(-3) Omega.cm was obtained. The refractive index and extinction coefficient of ZnO-Ga thin films were determined in the range of 270 1600 nm by varying angle spectroscopic ellipsometry (VASE). The simulation was carried out using a double oscillator model, which includes the Psemi-MO equation and the rho-tau Drude equation.
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