高特性温度激光器中InAs量子点的分子束外延生长

IF 0.6 4区物理与天体物理 Q4 OPTICS 红外与毫米波学报 Pub Date : 2020-01-01 DOI:10.11972/J.ISSN.1001-9014.2020.06.001

Yuan Ye, Sun Xiang-bin, Yang Chengao, Zhang Yi, Shang Jin-Ming, Xie Sheng-Wen, Zhang Yu, Ni Hai-Qiao, Xu Yingqiang, Niu Zhi-chuan

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引用次数: 0

摘要

袁晔1,2，苏祥斌1,2，杨成奥1,2，张毅1,2，尚金明1,2，谢胜文1,2，张宇1,2*，倪海乔1,2，徐应强1,2，牛志川1,2,3,4(1)。中国科学院半导体研究所超晶格与微结构国家重点实验室，北京100083;2. 中国科学院大学材料科学与光电子工程中心，北京100049;3.北京市量子信息科学研究院，北京100193;4. 山西大学物理与电子工程学院固体量子材料中心实验室，太原030006)

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Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers

YUAN Ye1,2, SU Xiang-Bin1,2, YANG Cheng-ao1,2, ZHANG Yi1,2, SHANG Jin-Ming1,2, XIE Sheng-Wen1,2, ZHANG Yu1,2*, NI Hai-Qiao1,2, XU Ying-Qiang1,2, NIU Zhi-Chuan1,2,3,4 (1. State Key Laboratory for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China; 2. Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences,Beijing 100049,China; 3. Beijing Academy of Quantum Information Sciences,Beijing 100193,China; 4. Laboratory of Solid Quantum Material Center,College of Physics and Electronic Engineering,Shanxi University, Taiyuan 030006,China)

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