A. Benmakhlouf, R. Makhloufi, A. Boutarfaia, B. Messai, F. Hadji, M. Nouiri
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The effect of Barium substitution on the structural and dielectric properties of Pb1-XBaX(Zr0.52Ti0.43(Al0.5Sb0.5)0.05)O3 ceramics at the morphotropic phase boundary
In this study PZT type ceramics with a general formula Pb1- xBax(Zr0.52Ti0.43(Al0.5Sb0.5)0.05)O3 where (x = 0.00, 0.04, and 0.08) were elaborated by the solid-state reaction and studied for their structural and dielectric properties in the region of the morphotropic phase boundary (MPB). Different techniques were used to characterize the obtained samples such as X-ray diffraction (XRD) which shows that the results confirm the high purity of prepared samples without any secondary phase and also indicate the coexistence of both the tetragonal and rhombohedral phases. All the absorption bands corresponding to the perovskite structure are exhibited by The Fourier Transform Infrared spectroscopy (FTIR). The scanning electronic microscopy (SEM) shows that the mean grain size was found between 2,84 and 2,14 µm, the Curie temperature (TC) decreased with increasing Ba2+ content. Furthermore, the effect of the temperature, frequency, and composition on the dielectric properties demonstrated a maximum value of the dielectric constant ε max = 38800 at 1 kHz when X= 0.08.
期刊介绍:
Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.