HfO2基铁电存储器的研究进展及应用

IF 5.2 1区 计算机科学 Q1 COMPUTER SCIENCE, INFORMATION SYSTEMS Tsinghua Science and Technology Pub Date : 2023-01-01 DOI:10.26599/TST.2021.9010096
Xiao Liu;Xiangshun Geng;Houfang Liu;Minghao Shao;Ruiting Zhao;Yi Yang;Tian-Ling Ren
{"title":"HfO2基铁电存储器的研究进展及应用","authors":"Xiao Liu;Xiangshun Geng;Houfang Liu;Minghao Shao;Ruiting Zhao;Yi Yang;Tian-Ling Ren","doi":"10.26599/TST.2021.9010096","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":60306,"journal":{"name":"Tsinghua Science and Technology","volume":"28 2","pages":""},"PeriodicalIF":5.2000,"publicationDate":"2023-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/iel7/5971803/9906039/09906052.pdf","citationCount":"2","resultStr":"{\"title\":\"Recent Progress and Applications of HfO2-Based Ferroelectric Memory\",\"authors\":\"Xiao Liu;Xiangshun Geng;Houfang Liu;Minghao Shao;Ruiting Zhao;Yi Yang;Tian-Ling Ren\",\"doi\":\"10.26599/TST.2021.9010096\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\",\"PeriodicalId\":60306,\"journal\":{\"name\":\"Tsinghua Science and Technology\",\"volume\":\"28 2\",\"pages\":\"\"},\"PeriodicalIF\":5.2000,\"publicationDate\":\"2023-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/iel7/5971803/9906039/09906052.pdf\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Tsinghua Science and Technology\",\"FirstCategoryId\":\"94\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/9906052/\",\"RegionNum\":1,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"COMPUTER SCIENCE, INFORMATION SYSTEMS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Tsinghua Science and Technology","FirstCategoryId":"94","ListUrlMain":"https://ieeexplore.ieee.org/document/9906052/","RegionNum":1,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"COMPUTER SCIENCE, INFORMATION SYSTEMS","Score":null,"Total":0}
引用次数: 2

摘要

2011年,在氧化铪(HfO2)基薄膜中发现了铁电性,这重新激发了人们对铁电性的兴趣。这些新型铁电体具有与传统钙钛矿铁电体完全不同的晶体形态,并且在积极的缩放和与标准集成电路制造工艺的兼容性下表现出更稳健的铁电性能。本文简要介绍了传统的铁电存储器,然后综述了这些HfO2基铁电体的基本特性、最新进展和存储器应用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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Recent Progress and Applications of HfO2-Based Ferroelectric Memory
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CiteScore
12.10
自引率
0.00%
发文量
2340
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