{"title":"EEPROM设备寿命估计","authors":"Leilei Li (李蕾蕾) , Zongguang Yu (于宗光) , Yue Hao (郝 跃)","doi":"10.1016/S1007-0214(11)70026-8","DOIUrl":null,"url":null,"abstract":"<div><p>A method was developed to estimate EEPROM device life based on the consistency for breakdown charge, <em>Q</em><sub>BD</sub>, for constant voltage time dependent dielectric breakdown (TDDB) and constant current TDDB stress tests. Although an EEPROM works with a constant voltage, <em>Q</em><sub>BD</sub> for the tunnel oxide can be extracted using a constant current TDDB. Once the charge through the tunnel oxide, Δ<em>Q</em><sub>FG</sub>, is measured, the lower limit of the EEPROM life can be related to <em>Q</em><sub>BD</sub>/Δ<em>Q</em><sub>FG</sub>. The method is reached by erase/write cycle tests on an EEPROM.</p></div>","PeriodicalId":60306,"journal":{"name":"Tsinghua Science and Technology","volume":null,"pages":null},"PeriodicalIF":5.2000,"publicationDate":"2011-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://sci-hub-pdf.com/10.1016/S1007-0214(11)70026-8","citationCount":"0","resultStr":"{\"title\":\"Estimates of EEPROM Device Lifetime\",\"authors\":\"Leilei Li (李蕾蕾) , Zongguang Yu (于宗光) , Yue Hao (郝 跃)\",\"doi\":\"10.1016/S1007-0214(11)70026-8\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>A method was developed to estimate EEPROM device life based on the consistency for breakdown charge, <em>Q</em><sub>BD</sub>, for constant voltage time dependent dielectric breakdown (TDDB) and constant current TDDB stress tests. Although an EEPROM works with a constant voltage, <em>Q</em><sub>BD</sub> for the tunnel oxide can be extracted using a constant current TDDB. Once the charge through the tunnel oxide, Δ<em>Q</em><sub>FG</sub>, is measured, the lower limit of the EEPROM life can be related to <em>Q</em><sub>BD</sub>/Δ<em>Q</em><sub>FG</sub>. The method is reached by erase/write cycle tests on an EEPROM.</p></div>\",\"PeriodicalId\":60306,\"journal\":{\"name\":\"Tsinghua Science and Technology\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":5.2000,\"publicationDate\":\"2011-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://sci-hub-pdf.com/10.1016/S1007-0214(11)70026-8\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Tsinghua Science and Technology\",\"FirstCategoryId\":\"1093\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1007021411700268\",\"RegionNum\":1,\"RegionCategory\":\"计算机科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"COMPUTER SCIENCE, INFORMATION SYSTEMS\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Tsinghua Science and Technology","FirstCategoryId":"1093","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1007021411700268","RegionNum":1,"RegionCategory":"计算机科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"COMPUTER SCIENCE, INFORMATION SYSTEMS","Score":null,"Total":0}
A method was developed to estimate EEPROM device life based on the consistency for breakdown charge, QBD, for constant voltage time dependent dielectric breakdown (TDDB) and constant current TDDB stress tests. Although an EEPROM works with a constant voltage, QBD for the tunnel oxide can be extracted using a constant current TDDB. Once the charge through the tunnel oxide, ΔQFG, is measured, the lower limit of the EEPROM life can be related to QBD/ΔQFG. The method is reached by erase/write cycle tests on an EEPROM.
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