便携式数字辐射探测器的超低功耗CMOS前端读出专用集成电路

IF 5.2 1区 计算机科学 Q1 COMPUTER SCIENCE, INFORMATION SYSTEMS Tsinghua Science and Technology Pub Date : 2011-04-01 DOI:10.1016/S1007-0214(11)70024-4
Yunbo Zhou (周云波) , Yu Yang (杨 煜) , Yueer Shan (单悦尔) , Huafeng Cao (曹华锋) , Bing Yang (杨 兵) , Zongguang Yu (于宗光)
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引用次数: 3

摘要

研制了一种用于便携式数字辐射探测器的超低功耗CMOS前端读出专用集成电路。采用CSMC 0.5 μm DPDM工艺制作了具有电荷敏感放大器和半高斯脉冲整形器的ASIC。0 pF时ENC噪声为363 e,噪声斜率为23 e/pF,符合严格的低噪声要求。峰值时间为250ns,转换增益为100mv /fC(检测器电容为20pf)。通过在弱反转区工作,该前端读出ASIC的超低功耗仅为0.1 mW/通道(3.0 V)。仿真和测试结果表明,该设计比在强反转区工作的前端读出ASIC功耗更低,适用于便携式数字辐射探测器。
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Ultra-low Power CMOS Front-End Readout ASIC for Portable Digital Radiation Detector

An ultra-low power complementary metal-oxide-semiconductor (CMOS) front-end readout ASIC was developed for a portable digital radiation detector. The ASIC having a charge sensitive amplifier and a semi-Gaussian pulse-shaper was produced using the CSMC 0.5 μm DPDM process. The ENC noise of 363 e at 0 pF with a noise slope of 23 e/pF complies with the stringent low noise requirements. The peaking time was 250 ns at a 100 mV/fC conversion gain (detector capacitance is 20 pF). By operating this front-end readout ASIC in the weak inversion region, the ultra-low power dissipation is only 0.1 mW/channel (3.0 V). Simulations and test results suggest that this design gives lower power consumption than the front-end readout ASICs working in the strong inversion and is appropriate for the portable digital radiation detectors.

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