用椭偏法测定锗纳米层氧化硅合金的光学常数

贵州科学 Pub Date : 2004-01-01 DOI:10.7498/aps.54.972

Cai Shao-hong

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引用次数: 0

摘要

研究了Si_(1) -x)Ge_(x)合金(x=0.005,0.02,0.05,0.15和0.25)的氧化行为。提出了一种新的椭偏法，用于锗合金氧化过程中锗纳米结构的生成和测量。用椭偏法测定了样品中锗纳米层的基本光学常数。确定了锗双纳米层的厚度和来源。在PL光谱中发现了一个新的峰，该峰与厚度为0.8~1.4nm的Ge双纳米层有关。UHFR方法和量子约束分析可以提供一些合适的模型和计算公式来解释氧化物中的PL光谱和纳米结构机制。

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OPTICAL CONSTANTS OF GE NANOLAYERS IN OXIDATION OF SIGE ALLOYS DETERMINED BY ELLIPSOMETRY

We investigatd the oxidation behavior of Si_(1-x)Ge_(x)alloys (x=0.005,0.02,0.05,0.15 and 0.25). A new ellipsometric method was used for generating and measuring Ge nanostructures in oxidation of SiGe alloys. The fundamental optical constants of Ge nanolayers in the sample were determined by ellipsometry. The thickness and origin of the Ge bi-nanolayer was found out. A new peak in PL spectra was discovered, which relatd to the Ge bi-nanolayer (thickness: 0.8～1.4nm). Some suitable model and calculating formula can be provided with the UHFR method and quantum confinement analysis to interprete the PL spectrum and the nanostructure mechanism in the oxide.

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