We report the investigation on the oxidation behavior of Si 1-x Ge x alloys (x=0.05, 0.15, and 0.25). In the PL spectra of Germanium quantum dots formed by the oxidation of Si 1-x Ge x substrate, at high oxidation temperature (800℃—1000℃) an emission band from 550nm to 720nm would originate from the diameter distribution of germanium nanoparticles (Ge clusters diameter: 3nm—4nm); and at low oxidation temperature (400℃—600℃) with Laser beam radiation, there is an emission band from 650nm to 900nm which may have come from the germanium clusters (diameter: 4nm—5nm). It is clearly seen that there are several peaks at 572nm, 620nm, 671nm, 724nm, 769nm, 810nm and 861nm wavelengths along the emission band, which are correlated to the quantum confinement effect with 3.32nm, 3.54nm, 3.76nm, 3.98nm, 4.17nm, 4.35nm and 4.62nm diameters of the germanium clusters, respectively. The simulation result with MC method demonstrates that the germanium clusters of the above diameters are more stable under the above conditions. A quantum confinement model has been set up, and calculations with the UHFR method and the quantum confinement analysis have been proposed to explain the PL spectra.
本文报道了Si 1-x Ge x合金(x=0.05, 0.15和0.25)的氧化行为。在Si 1-x Ge x衬底氧化形成的锗量子点的PL光谱中，在高氧化温度(800℃~ 1000℃)下，锗纳米粒子的直径分布(锗团簇直径为3nm ~ 4nm)产生了550nm ~ 720nm的发射带;在低氧化温度(400℃~ 600℃)下，激光束辐射有650 ~ 900nm的发光带，可能来自直径为4nm ~ 5nm的锗团簇。可以清楚地看到，沿发射波段在572nm、620nm、671nm、724nm、769nm、810nm和861nm处存在多个峰，这与锗团簇直径分别为3.32nm、3.54nm、3.76nm、3.98nm、4.17nm、4.35nm和4.62nm时的量子约束效应有关。MC方法的模拟结果表明，在上述条件下，上述直径的锗团簇更加稳定。建立了量子约束模型，并提出了用超高频光谱法计算和量子约束分析来解释PL光谱的方法。
{"title":"Germanium quantum dots formed by oxidation of SiGe alloys","authors":"L. Shi-rong, Huang Wei-qi, Qin Zhao-Jian","doi":"10.7498/aps.55.2488","DOIUrl":"https://doi.org/10.7498/aps.55.2488","url":null,"abstract":"We report the investigation on the oxidation behavior of Si 1-x Ge x alloys (x=0.05, 0.15, and 0.25). In the PL spectra of Germanium quantum dots formed by the oxidation of Si 1-x Ge x substrate, at high oxidation temperature (800℃—1000℃) an emission band from 550nm to 720nm would originate from the diameter distribution of germanium nanoparticles (Ge clusters diameter: 3nm—4nm); and at low oxidation temperature (400℃—600℃) with Laser beam radiation, there is an emission band from 650nm to 900nm which may have come from the germanium clusters (diameter: 4nm—5nm). It is clearly seen that there are several peaks at 572nm, 620nm, 671nm, 724nm, 769nm, 810nm and 861nm wavelengths along the emission band, which are correlated to the quantum confinement effect with 3.32nm, 3.54nm, 3.76nm, 3.98nm, 4.17nm, 4.35nm and 4.62nm diameters of the germanium clusters, respectively. The simulation result with MC method demonstrates that the germanium clusters of the above diameters are more stable under the above conditions. A quantum confinement model has been set up, and calculations with the UHFR method and the quantum confinement analysis have been proposed to explain the PL spectra.","PeriodicalId":12872,"journal":{"name":"Guizhou Science","volume":"55 1","pages":"2488-2491"},"PeriodicalIF":0.0,"publicationDate":"2006-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"71343491","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We investigatd the oxidation behavior of Si_(1-x)Ge_(x)alloys (x=0.005,0.02,0.05,0.15 and 0.25). A new ellipsometric method was used for generating and measuring Ge nanostructures in oxidation of SiGe alloys. The fundamental optical constants of Ge nanolayers in the sample were determined by ellipsometry. The thickness and origin of the Ge bi-nanolayer was found out. A new peak in PL spectra was discovered, which relatd to the Ge bi-nanolayer (thickness: 0.8～1.4nm). Some suitable model and calculating formula can be provided with the UHFR method and quantum confinement analysis to interprete the PL spectrum and the nanostructure mechanism in the oxide.
{"title":"OPTICAL CONSTANTS OF GE NANOLAYERS IN OXIDATION OF SIGE ALLOYS DETERMINED BY ELLIPSOMETRY","authors":"Cai Shao-hong","doi":"10.7498/aps.54.972","DOIUrl":"https://doi.org/10.7498/aps.54.972","url":null,"abstract":"We investigatd the oxidation behavior of Si_(1-x)Ge_(x)alloys (x=0.005,0.02,0.05,0.15 and 0.25). A new ellipsometric method was used for generating and measuring Ge nanostructures in oxidation of SiGe alloys. The fundamental optical constants of Ge nanolayers in the sample were determined by ellipsometry. The thickness and origin of the Ge bi-nanolayer was found out. A new peak in PL spectra was discovered, which relatd to the Ge bi-nanolayer (thickness: 0.8～1.4nm). Some suitable model and calculating formula can be provided with the UHFR method and quantum confinement analysis to interprete the PL spectrum and the nanostructure mechanism in the oxide.","PeriodicalId":12872,"journal":{"name":"Guizhou Science","volume":"1 1","pages":""},"PeriodicalIF":0.0,"publicationDate":"2004-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"71343483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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