Lu Zhang, Shijie Fu, Quan Sheng, Xuewen Luo, Junxiang Zhang, Wei Shi, Jianquan Yao
{"title":"3.5μm掺铒ZBLAN光纤激光器的泵浦量子效率优化。","authors":"Lu Zhang, Shijie Fu, Quan Sheng, Xuewen Luo, Junxiang Zhang, Wei Shi, Jianquan Yao","doi":"10.1007/s12200-023-00089-w","DOIUrl":null,"url":null,"abstract":"<p><p>976 nm + 1976 nm dual-wavelength pumped Er-doped ZBLAN fiber lasers are generally accepted as the preferred solution for achieving 3.5 μm lasing. However, the 2 μm band excited state absorption from the upper lasing level (<sup>4</sup>F<sub>9/2</sub> → <sup>4</sup>F<sub>7/2</sub>) depletes the Er ions population inversion, reducing the pump quantum efficiency and limiting the power scaling. In this work, we demonstrate that the pump quantum efficiency can be effectively improved by using a long-wavelength pump with lower excited state absorption rate. A 3.5 μm Er-doped ZBLAN fiber laser was built and its performances at different pump wavelengths were experimentally investigated in detail. A maximum output power at 3.46 μm of ~ 7.2 W with slope efficiency (with respect to absorbed 1990 nm pump power) of 41.2% was obtained with an optimized pump wavelength of 1990 nm, and the pump quantum efficiency was increased to 0.957 compared with the 0.819 for the conventional 1976 nm pumping scheme. Further power scaling was only limited by the available 1990 nm pump power. A numerical simulation was implemented to evaluate the cross section of excited state absorption via a theoretical fitting of experimental results. The potential of further power scaling was also discussed, based on the developed model.</p>","PeriodicalId":12685,"journal":{"name":"Frontiers of Optoelectronics","volume":"16 1","pages":"33"},"PeriodicalIF":4.1000,"publicationDate":"2023-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10635972/pdf/","citationCount":"0","resultStr":"{\"title\":\"Pump quantum efficiency optimization of 3.5 μm Er-doped ZBLAN fiber laser for high-power operation.\",\"authors\":\"Lu Zhang, Shijie Fu, Quan Sheng, Xuewen Luo, Junxiang Zhang, Wei Shi, Jianquan Yao\",\"doi\":\"10.1007/s12200-023-00089-w\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p><p>976 nm + 1976 nm dual-wavelength pumped Er-doped ZBLAN fiber lasers are generally accepted as the preferred solution for achieving 3.5 μm lasing. However, the 2 μm band excited state absorption from the upper lasing level (<sup>4</sup>F<sub>9/2</sub> → <sup>4</sup>F<sub>7/2</sub>) depletes the Er ions population inversion, reducing the pump quantum efficiency and limiting the power scaling. In this work, we demonstrate that the pump quantum efficiency can be effectively improved by using a long-wavelength pump with lower excited state absorption rate. A 3.5 μm Er-doped ZBLAN fiber laser was built and its performances at different pump wavelengths were experimentally investigated in detail. A maximum output power at 3.46 μm of ~ 7.2 W with slope efficiency (with respect to absorbed 1990 nm pump power) of 41.2% was obtained with an optimized pump wavelength of 1990 nm, and the pump quantum efficiency was increased to 0.957 compared with the 0.819 for the conventional 1976 nm pumping scheme. Further power scaling was only limited by the available 1990 nm pump power. A numerical simulation was implemented to evaluate the cross section of excited state absorption via a theoretical fitting of experimental results. The potential of further power scaling was also discussed, based on the developed model.</p>\",\"PeriodicalId\":12685,\"journal\":{\"name\":\"Frontiers of Optoelectronics\",\"volume\":\"16 1\",\"pages\":\"33\"},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2023-11-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10635972/pdf/\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Frontiers of Optoelectronics\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://doi.org/10.1007/s12200-023-00089-w\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Frontiers of Optoelectronics","FirstCategoryId":"5","ListUrlMain":"https://doi.org/10.1007/s12200-023-00089-w","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Pump quantum efficiency optimization of 3.5 μm Er-doped ZBLAN fiber laser for high-power operation.
976 nm + 1976 nm dual-wavelength pumped Er-doped ZBLAN fiber lasers are generally accepted as the preferred solution for achieving 3.5 μm lasing. However, the 2 μm band excited state absorption from the upper lasing level (4F9/2 → 4F7/2) depletes the Er ions population inversion, reducing the pump quantum efficiency and limiting the power scaling. In this work, we demonstrate that the pump quantum efficiency can be effectively improved by using a long-wavelength pump with lower excited state absorption rate. A 3.5 μm Er-doped ZBLAN fiber laser was built and its performances at different pump wavelengths were experimentally investigated in detail. A maximum output power at 3.46 μm of ~ 7.2 W with slope efficiency (with respect to absorbed 1990 nm pump power) of 41.2% was obtained with an optimized pump wavelength of 1990 nm, and the pump quantum efficiency was increased to 0.957 compared with the 0.819 for the conventional 1976 nm pumping scheme. Further power scaling was only limited by the available 1990 nm pump power. A numerical simulation was implemented to evaluate the cross section of excited state absorption via a theoretical fitting of experimental results. The potential of further power scaling was also discussed, based on the developed model.
期刊介绍:
Frontiers of Optoelectronics seeks to provide a multidisciplinary forum for a broad mix of peer-reviewed academic papers in order to promote rapid communication and exchange between researchers in China and abroad. It introduces and reflects significant achievements being made in the field of photonics or optoelectronics. The topics include, but are not limited to, semiconductor optoelectronics, nano-photonics, information photonics, energy photonics, ultrafast photonics, biomedical photonics, nonlinear photonics, fiber optics, laser and terahertz technology and intelligent photonics. The journal publishes reviews, research articles, letters, comments, special issues and so on.
Frontiers of Optoelectronics especially encourages papers from new emerging and multidisciplinary areas, papers reflecting the international trends of research and development, and on special topics reporting progress made in the field of optoelectronics. All published papers will reflect the original thoughts of researchers and practitioners on basic theories, design and new technology in optoelectronics.
Frontiers of Optoelectronics is strictly peer-reviewed and only accepts original submissions in English. It is a fully OA journal and the APCs are covered by Higher Education Press and Huazhong University of Science and Technology.
● Presents the latest developments in optoelectronics and optics
● Emphasizes the latest developments of new optoelectronic materials, devices, systems and applications
● Covers industrial photonics, information photonics, biomedical photonics, energy photonics, laser and terahertz technology, and more