H. M. Lavasani, W. Pan, B. Harrington, R. Abdolvand, F. Ayazi
{"title":"一种76dBΩ 1.7GHz 0.18µm CMOS可调跨阻放大器,采用宽带电流前置放大器,用于高频横向微机械振荡器","authors":"H. M. Lavasani, W. Pan, B. Harrington, R. Abdolvand, F. Ayazi","doi":"10.1109/ISSCC.2010.5433902","DOIUrl":null,"url":null,"abstract":"The frequency reference oscillator is a pivotal block in modern radio transceivers. Currently, modern transceivers rely on off-chip low frequency (≪100MHz) quartz crystal reference oscillators [1]. Silicon micromechanical oscillators are suitable alternative to quartz crystal oscillators due to their small form-factor, higher frequency, and integration potential with ICs [2]–[4]. In multi-gigahertz applications, large up-conversion ratio of synthesizers limits the performance of RF front-end. In addition, OFDM-based 3G/4G standards with stringent error vector magnitude (EVM) specification [5] demand a low phase-noise floor that for low frequency resonating tanks is only possible by reducing the 3-dB bandwidth (BW) of the low pass filter in the PLL. The small BW increases the size of filter and hence, complicates the integration of the synthesizer in a single chip. However, recent advances in micromachining technology have made the realization of post-CMOS-compatible UHF micromechanical oscillators possible [3], [4].","PeriodicalId":6418,"journal":{"name":"2010 IEEE International Solid-State Circuits Conference - (ISSCC)","volume":"32 2","pages":"318-319"},"PeriodicalIF":0.0000,"publicationDate":"2010-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":"{\"title\":\"A 76dBΩ 1.7GHz 0.18µm CMOS tunable transimpedance amplifier using broadband current pre-amplifier for high frequency lateral micromechanical oscillators\",\"authors\":\"H. M. Lavasani, W. Pan, B. Harrington, R. Abdolvand, F. Ayazi\",\"doi\":\"10.1109/ISSCC.2010.5433902\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The frequency reference oscillator is a pivotal block in modern radio transceivers. Currently, modern transceivers rely on off-chip low frequency (≪100MHz) quartz crystal reference oscillators [1]. Silicon micromechanical oscillators are suitable alternative to quartz crystal oscillators due to their small form-factor, higher frequency, and integration potential with ICs [2]–[4]. In multi-gigahertz applications, large up-conversion ratio of synthesizers limits the performance of RF front-end. In addition, OFDM-based 3G/4G standards with stringent error vector magnitude (EVM) specification [5] demand a low phase-noise floor that for low frequency resonating tanks is only possible by reducing the 3-dB bandwidth (BW) of the low pass filter in the PLL. The small BW increases the size of filter and hence, complicates the integration of the synthesizer in a single chip. However, recent advances in micromachining technology have made the realization of post-CMOS-compatible UHF micromechanical oscillators possible [3], [4].\",\"PeriodicalId\":6418,\"journal\":{\"name\":\"2010 IEEE International Solid-State Circuits Conference - (ISSCC)\",\"volume\":\"32 2\",\"pages\":\"318-319\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-03-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"25\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Solid-State Circuits Conference - (ISSCC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISSCC.2010.5433902\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Solid-State Circuits Conference - (ISSCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSCC.2010.5433902","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 76dBΩ 1.7GHz 0.18µm CMOS tunable transimpedance amplifier using broadband current pre-amplifier for high frequency lateral micromechanical oscillators
The frequency reference oscillator is a pivotal block in modern radio transceivers. Currently, modern transceivers rely on off-chip low frequency (≪100MHz) quartz crystal reference oscillators [1]. Silicon micromechanical oscillators are suitable alternative to quartz crystal oscillators due to their small form-factor, higher frequency, and integration potential with ICs [2]–[4]. In multi-gigahertz applications, large up-conversion ratio of synthesizers limits the performance of RF front-end. In addition, OFDM-based 3G/4G standards with stringent error vector magnitude (EVM) specification [5] demand a low phase-noise floor that for low frequency resonating tanks is only possible by reducing the 3-dB bandwidth (BW) of the low pass filter in the PLL. The small BW increases the size of filter and hence, complicates the integration of the synthesizer in a single chip. However, recent advances in micromachining technology have made the realization of post-CMOS-compatible UHF micromechanical oscillators possible [3], [4].