用超短激光脉冲刻蚀氧化物半导体

2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666) Pub Date : 2003-06-22 DOI:10.1109/CLEOE.2003.1313642

D. Ruthe, K. Zimmer

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摘要

本文分析了超短激光脉冲对氧化锌、氧化铟锡的刻蚀和结构的影响。采用Ti:蓝宝石激光器，在775 nm波长下提供120fs脉冲，在室温和真空条件下对样品进行蚀刻。对蚀刻半导体的表面形貌进行了研究。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Etching of oxide semiconductors by ultrashort laser pulses

In this paper the etching and structuring of zinc oxide, indium tin oxide by ultrashort laser pulses is analysed. A Ti:sapphire laser, which provides 120 fs pulses at a wavelength of 775 nm, was used to etch the samples at room temperature in air as well as in vacuum. The surface topography of the etched semiconductors has been investigated.

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2003 Conference on Lasers and Electro-Optics Europe (CLEO/Europe 2003) (IEEE Cat. No.03TH8666)

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