{"title":"在硅上集成光学和电子互连","authors":"S. Lazarouk, A. Leshok, P. Katsuba, V. Borisenko","doi":"10.1109/CRMICO.2014.6959638","DOIUrl":null,"url":null,"abstract":"The design and fabrication technology of integrated optical and electrical interconnects on silicon are developed. The light-emitting diodes in the presented construction are based on nanostructured silicon built in an alumina matrix. The optocouple with the current transforming coefficient of about 1 % is fabricated. The advantages of the developed design are shown in comparison with existing analogues.","PeriodicalId":6662,"journal":{"name":"2014 24th International Crimean Conference Microwave & Telecommunication Technology","volume":"33 1","pages":"800-802"},"PeriodicalIF":0.0000,"publicationDate":"2014-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Integration of optical and electronic interconnections on silicon\",\"authors\":\"S. Lazarouk, A. Leshok, P. Katsuba, V. Borisenko\",\"doi\":\"10.1109/CRMICO.2014.6959638\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The design and fabrication technology of integrated optical and electrical interconnects on silicon are developed. The light-emitting diodes in the presented construction are based on nanostructured silicon built in an alumina matrix. The optocouple with the current transforming coefficient of about 1 % is fabricated. The advantages of the developed design are shown in comparison with existing analogues.\",\"PeriodicalId\":6662,\"journal\":{\"name\":\"2014 24th International Crimean Conference Microwave & Telecommunication Technology\",\"volume\":\"33 1\",\"pages\":\"800-802\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-11-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 24th International Crimean Conference Microwave & Telecommunication Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/CRMICO.2014.6959638\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 24th International Crimean Conference Microwave & Telecommunication Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CRMICO.2014.6959638","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Integration of optical and electronic interconnections on silicon
The design and fabrication technology of integrated optical and electrical interconnects on silicon are developed. The light-emitting diodes in the presented construction are based on nanostructured silicon built in an alumina matrix. The optocouple with the current transforming coefficient of about 1 % is fabricated. The advantages of the developed design are shown in comparison with existing analogues.
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