在工艺变化下提高片上数据缓存的可靠性

Wei Wu, S. Tan, Jun Yang, Shih-Lien Lu
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引用次数: 7

摘要

片上高速缓存占据了芯片面积的很大一部分。它们比较小的单元更容易受到参数变化的影响。随着泄漏电流成为总功耗的重要组成部分,泄漏电流变化引起的热和可靠性问题成为片上高速缓存设计的一个重要问题。本文研究了工艺变化,特别是泄漏变化对片上高速缓存的温度和可靠性的影响。我们的统计模拟显示,在进程变化的情况下,85%的缓存寿命缩短,平均寿命是理想缓存的81.6%。在运行时,动力分布的不均匀和相应的热变化会进一步恶化这种情况。为了解决这一问题,我们提出了一种动态缓存子阵列排列方案,该方案可以减轻高泄漏区域的热应力,从而提高缓存的可靠性。在17个Spec2k基准测试上的实验表明,我们的方案可以将缓存寿命延长20.3%,平均降低峰值温度7度,在数据密集型应用中甚至更多。
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Improving the reliability of on-chip data caches under process variations
On-chip caches take a large portion of the chip area. They are much more vulnerable to parameter variation than smaller units. As leakage current becomes a significant component of the total power consumption, the leakage current variations induced thermal and reliability problem to the on-chip caches become an important design concern. This paper studies the impact of process variations, particular the leakage variations, on the temperature and reliability of on-chip caches. Our statistical simulation shows that, under process variation, 85% of the caches see shortened lifetime, with average lifetime being 81.6% of the ideal cache. At runtime, unevenly distributed dynamic power and the corresponding thermal variation would further deteriorate the situation. To mitigate this problem, we propose a dynamic cache subarray permutation scheme that can alleviate the thermal stress on a high-leakage area to improve the reliability of the caches. Experiments on 17 Spec2k benchmarks show that our scheme can extend the cache lifetime by up to 20.3%, and reduce the peak temperature by 7 degrees on average and more on data-intensive applications.
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