分析热安置VLSI寿命改善和最小的性能变化

A. Kahng, S. Kang, Wei Li, Bao Liu
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引用次数: 5

摘要

DSM和纳米级VLSI设计受到越来越显著的热效应对VLSI电路寿命和性能变化的影响,这可以通过VLSI的放置有效地抑制。我们提出了精确和高效的VLSI热优化的分析布局,并提出最小化最大片上温度作为提高VLSI寿命和最小化性能变化的热优化目标。我们开发了一种有效的分析热放置技术,以及一种改进的分析放置技术,该技术具有新的细胞扩散功能。我们的实验结果表明,与APlace等无热分析封装相比,我们提出的分析式热封装在两种工业设计测试用例中,片上最大温度变化分别减少了17.85%和30.77%,无线长度分别减少了4.61%和0.45%。
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Analytical thermal placement for VLSI lifetime improvement and minimum performance variation
DSM and nanometer VLSI designs are subject to an increasingly significant thermal effect on VLSI circuit lifetime and performance variation, which can be effectively subdued by VLSI placement. We propose analytical placement for accurate and efficient VLSI thermal optimization, and propose minimized maximum on-chip temperature as the thermal optimization objective for improved VLSI lifetime and minimized performance variation. We develop an effective analytical thermal placement technique, as well as an improved analytical placement technique with a new cell spreading function. Our experimental results show that our proposed analytical thermal placement achieves 17.85% and 30.77% maximum on-chip temperature variation reduction as well as 4.61% and 0.45% wirelength reduction respectively for the two industry design test cases compared with thermal-oblivious analytical placement, e.g., APlace.
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