{"title":"HWCVD沉积a-Si:H的低温铝诱导结晶","authors":"V. Pandey, R. Dusane","doi":"10.1109/ICANMEET.2013.6609307","DOIUrl":null,"url":null,"abstract":"Present work provides a comprehensive study on Aluminum induced crystallization (AIC) of Hot Wire Chemical Vapour Deposited (HWCVD) a-Si:H. Different parameters, namely, layer sequence, annealing temperature and time, were studied to correlate their impact on the quality of nc-Si:H films obtained by AIC. Device quality nc-Si:H thin films at a very low temperature of 473 K were obtained for the layer sequence of substrate/a-Si:H/Al.","PeriodicalId":13708,"journal":{"name":"International Conference on Advanced Nanomaterials & Emerging Engineering Technologies","volume":"245 1","pages":"357-359"},"PeriodicalIF":0.0000,"publicationDate":"2013-07-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Low temperature aluminum induced crystallization of HWCVD deposited a-Si:H\",\"authors\":\"V. Pandey, R. Dusane\",\"doi\":\"10.1109/ICANMEET.2013.6609307\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Present work provides a comprehensive study on Aluminum induced crystallization (AIC) of Hot Wire Chemical Vapour Deposited (HWCVD) a-Si:H. Different parameters, namely, layer sequence, annealing temperature and time, were studied to correlate their impact on the quality of nc-Si:H films obtained by AIC. Device quality nc-Si:H thin films at a very low temperature of 473 K were obtained for the layer sequence of substrate/a-Si:H/Al.\",\"PeriodicalId\":13708,\"journal\":{\"name\":\"International Conference on Advanced Nanomaterials & Emerging Engineering Technologies\",\"volume\":\"245 1\",\"pages\":\"357-359\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2013-07-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Conference on Advanced Nanomaterials & Emerging Engineering Technologies\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICANMEET.2013.6609307\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference on Advanced Nanomaterials & Emerging Engineering Technologies","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICANMEET.2013.6609307","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Low temperature aluminum induced crystallization of HWCVD deposited a-Si:H
Present work provides a comprehensive study on Aluminum induced crystallization (AIC) of Hot Wire Chemical Vapour Deposited (HWCVD) a-Si:H. Different parameters, namely, layer sequence, annealing temperature and time, were studied to correlate their impact on the quality of nc-Si:H films obtained by AIC. Device quality nc-Si:H thin films at a very low temperature of 473 K were obtained for the layer sequence of substrate/a-Si:H/Al.
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