M. Hsieh, K. Liang, Y. Chan, C.Y. Lee, G.J. Chen, D. Tang
{"title":"低温下SIC结构SiGe HBTs的高频性能和功率性能","authors":"M. Hsieh, K. Liang, Y. Chan, C.Y. Lee, G.J. Chen, D. Tang","doi":"10.1109/MWSYM.2005.1517199","DOIUrl":null,"url":null,"abstract":"The high-frequency behavior and power capability of SiGe HBTs with selectively implanted collector structure have been measured at temperature between 77 and 350 K. Detailed analyses of temperature dependence on dc, high-frequency parameters, and power performances are presented. An HBT transit-time analysis is also described to find out the factors causing the increase in cutoff frequency (f/sub T/) at low temperature operation of different functionality of devices. In addition, the power capability of enhanced-breakdown device at liquid-nitrogen temperature is severely degraded.","PeriodicalId":13133,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2005.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2005-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"The high frequency and power performance of SiGe HBTs with SIC structure at cryogenic temperature\",\"authors\":\"M. Hsieh, K. Liang, Y. Chan, C.Y. Lee, G.J. Chen, D. Tang\",\"doi\":\"10.1109/MWSYM.2005.1517199\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The high-frequency behavior and power capability of SiGe HBTs with selectively implanted collector structure have been measured at temperature between 77 and 350 K. Detailed analyses of temperature dependence on dc, high-frequency parameters, and power performances are presented. An HBT transit-time analysis is also described to find out the factors causing the increase in cutoff frequency (f/sub T/) at low temperature operation of different functionality of devices. In addition, the power capability of enhanced-breakdown device at liquid-nitrogen temperature is severely degraded.\",\"PeriodicalId\":13133,\"journal\":{\"name\":\"IEEE MTT-S International Microwave Symposium Digest, 2005.\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE MTT-S International Microwave Symposium Digest, 2005.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.2005.1517199\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2005.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2005.1517199","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The high frequency and power performance of SiGe HBTs with SIC structure at cryogenic temperature
The high-frequency behavior and power capability of SiGe HBTs with selectively implanted collector structure have been measured at temperature between 77 and 350 K. Detailed analyses of temperature dependence on dc, high-frequency parameters, and power performances are presented. An HBT transit-time analysis is also described to find out the factors causing the increase in cutoff frequency (f/sub T/) at low temperature operation of different functionality of devices. In addition, the power capability of enhanced-breakdown device at liquid-nitrogen temperature is severely degraded.
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