用DFT+DMFT研究了FeSi和CoSi的电子结构

P. Dutta, S. Pandey
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引用次数: 0

摘要

Hubbard U在强相关材料的从头计算中起着至关重要的作用。在密度泛函理论(DFT)和动态平均场理论(DMFT)等先进技术中引入适当的U值,可以帮助我们理解这些系统的各种物理性质。本文采用DFT+嵌入式DMFT方法研究了FeSi和CoSi的占据态。将这两种材料的x射线光电子能谱与DFT+eDMFT得到的Fe 3d和Co 3d轨道的偏态密度(PDOS)进行了比较。在本研究中,利用约束DFT技术计算了U。对于有效库仑相互作用Ueff的计算,费米能级附近的PDOS表明杂质原子Fe和Co分别在FeSi和CoSi中的三维态参与可以忽略不计。在此计算中,d-线性化能(Ed)保持在高于EF的~ 40 eV。该图表明,FeSi和CoSi的Ueff分别为~ 4.4 eV和4.5 eV。DFT+eDMFT方法利用计算得到的U值,定性地解释了两种材料的占据态。
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Studying the electronic structure of FeSi & CoSi by using DFT+DMFT
Hubbard U plays a vital role in ab-initio calculations for strongly correlated materials. Involving an appropriate value of U for advanced techniques like density functional theory (DFT) and dynamical mean field theory (DMFT), can help us to understand various physical properties of these systems. Here, we studied the occupied states of FeSi and CoSi by using DFT+embedded DMFT method. The x-ray photoelectron spectra for both materials are compared with partial density of states (PDOS) for Fe 3d and Co 3d orbitals obtained from DFT+eDMFT. For the study, U has been calculated by using constrained DFT technique. For the calculation of effective Coulomb interaction Ueff, PDOS around the Fermi level (EF) shows negligible participation of 3d states for impurity atoms Fe & Co in FeSi and CoSi, respectively. The d-linearization energy (Ed) is kept as ∼40 eV above EF for this calculation. This plot indicates the appropriate evaluation of Ueff for FeSi and CoSi as ∼4.4 eV and 4.5 eV, respectively. With the computed values of U, DFT+eDMFT method has qualitatively explained the occupied states of both the materials.
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