{"title":"气体传感器装置制作","authors":"S. Nagirnyak, T. Dontsova","doi":"10.1109/NAP.2017.8190193","DOIUrl":null,"url":null,"abstract":"The paper considers the structure of typical semiconductor gas sensor and describes the main stages of device production. Attention is focused on processes for creation of each device part. The influence of topology and geometry of heater element and measured electrodes is presented.","PeriodicalId":6516,"journal":{"name":"2017 IEEE 7th International Conference Nanomaterials: Application & Properties (NAP)","volume":"32 1","pages":"01NNPT13-1-01NNPT13-4"},"PeriodicalIF":0.0000,"publicationDate":"2017-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Gas sensor device creation\",\"authors\":\"S. Nagirnyak, T. Dontsova\",\"doi\":\"10.1109/NAP.2017.8190193\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The paper considers the structure of typical semiconductor gas sensor and describes the main stages of device production. Attention is focused on processes for creation of each device part. The influence of topology and geometry of heater element and measured electrodes is presented.\",\"PeriodicalId\":6516,\"journal\":{\"name\":\"2017 IEEE 7th International Conference Nanomaterials: Application & Properties (NAP)\",\"volume\":\"32 1\",\"pages\":\"01NNPT13-1-01NNPT13-4\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2017-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2017 IEEE 7th International Conference Nanomaterials: Application & Properties (NAP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/NAP.2017.8190193\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IEEE 7th International Conference Nanomaterials: Application & Properties (NAP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NAP.2017.8190193","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The paper considers the structure of typical semiconductor gas sensor and describes the main stages of device production. Attention is focused on processes for creation of each device part. The influence of topology and geometry of heater element and measured electrodes is presented.
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