Low-temperature wafer bonding for MEMS and three-dimensional integrated circuits manufacture

Bonding is important part of MEMS, NEMS and three-dimensional integrated circuits manufacture. However, most of bonding methods are high-temperature and require specific environmental conditions such as smoothness and cleanliness of substrate surface, substrate materials, applied forces etc. This chapter is about one of the way to realize wafer bonding, which advantages are low temperatures of bonding process and low requirements for preparation of bonded wafers. Particularly, work concentrates on the first stage of low-temperature wafer bonding, identifying dependence how parameters of the deposition method and annealing influence on the thickness of film obtained from TEOS. The established characteristics will help to receive thickness-controlled films that can be successfully used as intermediate layers for low-temperature wafer bonding — one of the methods of 3D packaging technology.