超薄硅片真空封装Mems谐振器的大应变测量

L. Belsito, M. Ferri, A. Roncaglia
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引用次数: 0

摘要

在超薄硅片(总厚度约60 μm)上采用晶片级真空封装制作的硅谐振器用于钢板的应变测量。使用M-bond 610和乐泰EA 9461粘合剂将薄芯片粘在钢上,并测量传感器在闭环操作谐振器时进行弯曲测试时的响应,评估可能的非理想影响,如蠕变和滞后。在测量中,将在超薄芯片上获得的结果与在500 μm厚硅衬底上制造的传感器上获得的结果进行了比较。结果表明,薄化芯片的蠕变水平低于0.1%,没有明显的滞后现象,应变测量范围超过850 με,这表明薄化芯片可以在大范围内获得高质量的真空封装硅MEMS谐振器应变测量
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Large Strain Measurements by Vacuum-Packaged Mems Resonators Manufactured on Ultrathin Silicon Chips
Silicon resonators fabricated with wafer-level vacuum packaging on ultrathin silicon chips (overall thickness around 60 μm) are utilized for strain measurements on steel slabs. The thinned chips are glued on steel using M-bond 610 and Loctite EA 9461 adhesives and the sensor response during bending tests performed while operating the resonators in closed loop is measured, evaluating possible non-ideal effects such as creep and hysteresis. In the measurements, the results obtained on the ultrathin chips are compared with those achieved on sensors manufactured on the native 500 μm thick silicon substrates. The results obtained show an astonishing improvement in the measurements realized with the thinned chips, which show creep levels below 0.1%, no appreciable hysteresis phenomena and strain measurement range extended beyond 850 με, indicating that chip thinning can be a viable way to obtain high-quality strain measurements on a large range by vacuum-packaged silicon MEMS resonators
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