{"title":"采用0.13µm SiGe技术的220GHz频率四倍器设计","authors":"Genyin Ma, F. Meng","doi":"10.1109/ICICM54364.2021.9660219","DOIUrl":null,"url":null,"abstract":"This paper presents a 220GHz quadrupler based on the advanced 130nmSiGe HBT process. The circuit adopts differential amplifier structure and active balun to reduce device redundancy of impedance matching network. A 1/4$\\lambda$@220GHz harmonic reflector is proposed to reduce the influence of transistor parasitic capacitance and improve the output power. Compensation capacitor technology is introduced to improve the amplitude and phase characteristics of differential signals. This design features an output power of -0.572dBm, a bandwidth of 19 GHz, consumes 0.14 W of dc power and occupies 0.203 mm2 of chip area.","PeriodicalId":6693,"journal":{"name":"2021 6th International Conference on Integrated Circuits and Microsystems (ICICM)","volume":"34 1","pages":"81-84"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of a 220GHz Frequency Quadrupler in 0.13 µ m SiGe Technology\",\"authors\":\"Genyin Ma, F. Meng\",\"doi\":\"10.1109/ICICM54364.2021.9660219\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents a 220GHz quadrupler based on the advanced 130nmSiGe HBT process. The circuit adopts differential amplifier structure and active balun to reduce device redundancy of impedance matching network. A 1/4$\\\\lambda$@220GHz harmonic reflector is proposed to reduce the influence of transistor parasitic capacitance and improve the output power. Compensation capacitor technology is introduced to improve the amplitude and phase characteristics of differential signals. This design features an output power of -0.572dBm, a bandwidth of 19 GHz, consumes 0.14 W of dc power and occupies 0.203 mm2 of chip area.\",\"PeriodicalId\":6693,\"journal\":{\"name\":\"2021 6th International Conference on Integrated Circuits and Microsystems (ICICM)\",\"volume\":\"34 1\",\"pages\":\"81-84\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2021 6th International Conference on Integrated Circuits and Microsystems (ICICM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICM54364.2021.9660219\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 6th International Conference on Integrated Circuits and Microsystems (ICICM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICM54364.2021.9660219","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Design of a 220GHz Frequency Quadrupler in 0.13 µ m SiGe Technology
This paper presents a 220GHz quadrupler based on the advanced 130nmSiGe HBT process. The circuit adopts differential amplifier structure and active balun to reduce device redundancy of impedance matching network. A 1/4$\lambda$@220GHz harmonic reflector is proposed to reduce the influence of transistor parasitic capacitance and improve the output power. Compensation capacitor technology is introduced to improve the amplitude and phase characteristics of differential signals. This design features an output power of -0.572dBm, a bandwidth of 19 GHz, consumes 0.14 W of dc power and occupies 0.203 mm2 of chip area.
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