{"title":"三维集成电路制造技术","authors":"R. Reif, A. Fan, Kuan-Neng Chen, Shamik Das","doi":"10.1109/ISQED.2002.996687","DOIUrl":null,"url":null,"abstract":"The MIT approach to 3D VLSI integration is based on low-temperature Cu-Cu wafer bonding. Device wafers are bonded in a face-to-back manner, with short vertical vias and Cu-Cu pads as the inter-wafer throughway. In our scheme, there are several reliability criteria, which include: (a) structural integrity of the Cu-Cu bond; (b) Cu-Cu contact electrical characteristics; and (c) process flow efficiency and repeatability. In addition, CAD tools are needed to aid in design and layout of 3DICs. This paper discusses recent results in all these areas.","PeriodicalId":20510,"journal":{"name":"Proceedings International Symposium on Quality Electronic Design","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"124","resultStr":"{\"title\":\"Fabrication technologies for three-dimensional integrated circuits\",\"authors\":\"R. Reif, A. Fan, Kuan-Neng Chen, Shamik Das\",\"doi\":\"10.1109/ISQED.2002.996687\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The MIT approach to 3D VLSI integration is based on low-temperature Cu-Cu wafer bonding. Device wafers are bonded in a face-to-back manner, with short vertical vias and Cu-Cu pads as the inter-wafer throughway. In our scheme, there are several reliability criteria, which include: (a) structural integrity of the Cu-Cu bond; (b) Cu-Cu contact electrical characteristics; and (c) process flow efficiency and repeatability. In addition, CAD tools are needed to aid in design and layout of 3DICs. This paper discusses recent results in all these areas.\",\"PeriodicalId\":20510,\"journal\":{\"name\":\"Proceedings International Symposium on Quality Electronic Design\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2002-08-07\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"124\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings International Symposium on Quality Electronic Design\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISQED.2002.996687\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings International Symposium on Quality Electronic Design","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2002.996687","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fabrication technologies for three-dimensional integrated circuits
The MIT approach to 3D VLSI integration is based on low-temperature Cu-Cu wafer bonding. Device wafers are bonded in a face-to-back manner, with short vertical vias and Cu-Cu pads as the inter-wafer throughway. In our scheme, there are several reliability criteria, which include: (a) structural integrity of the Cu-Cu bond; (b) Cu-Cu contact electrical characteristics; and (c) process flow efficiency and repeatability. In addition, CAD tools are needed to aid in design and layout of 3DICs. This paper discusses recent results in all these areas.
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