自旋-轨道转矩对合成反铁磁轨道畴壁倾斜的抑制作用

Xiaodong He, J. Yun, Jianrong Zhang, Y. Zhai, Xi Guo, Xu Zhang, B. Cui, Yang Ren, Y. Zuo, L. Xi
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摘要

垂直磁化合成反铁磁体具有低杂散场、致密畴壁和高记录密度等优点,是赛马场存储器的理想选择。本文研究了具有不同顶部磁性(TM) Co层厚度的合成反铁磁(SAF) Ta/Pt/Co/Pt/Ru/Pt/Co/Ta结构在磁场和电流驱动下的DW运动动力学。结果表明,对于剩余率可忽略不计的样品,当场脉冲低于临界场时,DW运动方向会发生反转。对于电流驱动的DW运动情况,由于SAF结构的强层间交换耦合,发现DW速度显著增强,并且对DW平面的倾斜有很强的抑制作用。在自旋电子跑道存储器中,快速的DW速度和小的倾斜角度是有价值的。
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Suppression Effect on the Domain Wall Tilting in Synthetic Antiferromagnetic Racetrack Driven by the Spin–Orbit Torque
The perpendicularly magnetized synthetic antiferromagnet is an ideal candidate for racetrack memory due to the low stray field, allowing the closely packed domain wall (DW) and high recording density. Herein, the dynamics of DW motion driven by the magnetic field and current are investigated in the synthetic antiferromagnetic (SAF) Ta/Pt/Co/Pt/Ru/Pt/Co/Ta structures with different thicknesses of the top magnetic (TM) Co layers. The results illustrate that the direction of the DW motion will be reversed when the field pulse is below a critical field for the sample with a negligible remanence ratio. As for the current‐driven DW motion case, a significant enhancement of the DW velocity, as well as a strong suppression effect on the tilting of DW's plane due to the strong interlayer exchange coupling for the SAF structure, is found. The fast DW velocity and small tilting angle in SAF are valuable for spintronic racetrack memories.
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