65nm CMOS GPU与0.1µm DRAM之间的8Tb/s 1pJ/b 0.8mm2/Tb/s QDR电感耦合接口

N. Miura, Kazutaka Kasuga, Mitsuko Saito, T. Kuroda
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引用次数: 38

摘要

本文提出了一种8Tb/s 1pJ/b 0.8mm2/Tb/s四数据速率(QDR)的65nm CMOS GPU与0.1µm DRAM之间的电感耦合接口。该接口由1024位并行电感耦合收发器组成,工作速度为8Gb/s/link。在DRAM收发器中,数据通过使用正交时钟和异或操作进行多路复用和解路复用。这种QDR电路技术弥补了GPU和DRAM之间的晶体管性能差距,实现了8Gb/s的带宽。数据重定时的时钟通过使用注入锁VCO从接收到的数据中恢复。不需要时钟链路和时钟分配电路,布局面积小,仅为0.8mm2/Tb/s。收发器前端采用具有自适应偏置控制的NMOS CML电路实现。收发器对PVT变化的灵敏度很小,使所有1024个并联收发器都能在BER≪10{−16}处工作。它还减少了收发器所需的设计余量,从而将功率降低到1pJ/b。与最新的有线40nm DRAM接口[1]相比,带宽提高了32倍,能耗为1/8,布局面积为1/22。
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An 8Tb/s 1pJ/b 0.8mm2/Tb/s QDR inductive-coupling interface between 65nm CMOS GPU and 0.1µm DRAM
This paper presents an 8Tb/s 1pJ/b 0.8mm2/Tb/s quad data rate (QDR) inductive-coupling interface between 65nm CMOS GPU and 0.1µm DRAM. The interface consists of 1024-bit parallel inductive-coupling transceivers operating at 8Gb/s/link. In the DRAM transceiver, data are multiplexed and demultiplexed by using a quadrature clock and XOR operation. This circuit technique for QDR compensates for transistor performance gap between the GPU and the DRAM to achieve 8Gb/s bandwidth. The clock for data retiming is recovered from the received data by using an injection-lock VCO. Clock links and clock distribution circuits are not needed, resulting in small layout area of 0.8mm2/Tb/s. Frontend of the transceiver is implemented using NMOS CML circuits with adaptive bias control. The transceiver's sensitivity to PVT variations is small, enabling all the 1024 parallel transceivers to operate at BER≪10{−16}. It also reduces the design margin required of the transceiver, resulting in power reduction to 1pJ/b. Compared to the latest wired 40nm DRAM interface [1], the bandwidth is 32x higher, while the energy consumption is 1/8 and the layout area is 1/22.
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