软场效应晶体管:相变材料辅助软开关场效应晶体管,用于缓解电源电压下降

S. Teja, J. Kulkarni
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引用次数: 1

摘要

提出了一种基于相变材料(PTM)的新型软开关晶体管结构——软场效应管(soft - fet)。通过利用ptm中的突然相变机制,所提出的软场效应管实现了逻辑门的门输入的软开关,从而降低了峰值开关电流以及陡峭的电流变化(di/dt)。此外,对于相同的峰值电流,与各种基线互补金属氧化物半导体(CMOS)逻辑门变体相比,软场效应管在宽电压范围内产生更低的延迟惩罚。我们进行了详细的PTM参数优化,以获得最佳的软场效应管性能。当用作电源门时,软场效应管可以实现~20mV的低电压,当用作I/O缓冲器时,可以实现46%的低地面反弹,提高8.8%的能源效率。
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Soft-FET: Phase transition material assisted Soft switching F ield E ffect T ransistor for supply voltage droop mitigation
Phase Transition Material (PTM) assisted novel soft switching transistor architecture named "Soft-FET" is proposed for supply voltage droop mitigation. By utilizing the abrupt phase transition mechanism in PTMs, the proposed Soft-FET achieves soft switching of the gate input of a logic gate resulting in reduced peak switching current as well as steep current variations (di/dt). In addition, the Soft-FET incurs lower delay penalty across a wide voltage range compared to various baseline Complementary Metal Oxide Semiconductor (CMOS) logic gate variants for the same peak current. We perform a detailed PTM parameter optimization for optimum Soft-FET performance. Soft-FETs when used as power gates achieve ~20mV lower supply droop and when used as an I/O buffer achieves 46% lower ground bounce with 8.8% improved energy efficiency.
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