K. Cheng, C. Teng, H. Y. Huang, H. C. Chen, C. Shih, T. H. Liu, C. Tsai, C. W. Lu, Y. H. Wu, H. Lee, M. H. Lee, M. Hsieh, B. Lin, S. Hou, C. J. Lee, H. H. Lu, T. Bao, S. Shue, C. H. Yu
{"title":"柔性顶部金属结构，提高超低k可靠性","authors":"K. Cheng, C. Teng, H. Y. Huang, H. C. Chen, C. Shih, T. H. Liu, C. Tsai, C. W. Lu, Y. H. Wu, H. Lee, M. H. Lee, M. Hsieh, B. Lin, S. Hou, C. J. Lee, H. H. Lu, T. Bao, S. Shue, C. H. Yu","doi":"10.1109/IITC-MAM.2015.7325587","DOIUrl":null,"url":null,"abstract":"High stresses generated from chip-package interactions (CPI), especially when large die is flip mounted on organic substrate using Pb-free C4 bumps, can easily cause low-k delamination. A novel scheme by applying an elastic material can effectively reduce the transmitted stresses and, thus, resolve the interfacial delamination issue. Along with an optimized chip-package integration solution, a reliable interconnect structure with good electrical performance, has been successfully demonstrated.","PeriodicalId":6514,"journal":{"name":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","volume":"26 1","pages":"303-306"},"PeriodicalIF":0.0000,"publicationDate":"2015-05-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A flexible top metal structure to improve ultra low-k reliability\",\"authors\":\"K. Cheng, C. Teng, H. Y. Huang, H. C. Chen, C. Shih, T. H. Liu, C. Tsai, C. W. Lu, Y. H. Wu, H. Lee, M. H. Lee, M. Hsieh, B. Lin, S. Hou, C. J. Lee, H. H. Lu, T. Bao, S. Shue, C. H. Yu\",\"doi\":\"10.1109/IITC-MAM.2015.7325587\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"High stresses generated from chip-package interactions (CPI), especially when large die is flip mounted on organic substrate using Pb-free C4 bumps, can easily cause low-k delamination. A novel scheme by applying an elastic material can effectively reduce the transmitted stresses and, thus, resolve the interfacial delamination issue. Along with an optimized chip-package integration solution, a reliable interconnect structure with good electrical performance, has been successfully demonstrated.\",\"PeriodicalId\":6514,\"journal\":{\"name\":\"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)\",\"volume\":\"26 1\",\"pages\":\"303-306\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-05-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IITC-MAM.2015.7325587\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Interconnect Technology Conference and 2015 IEEE Materials for Advanced Metallization Conference (IITC/MAM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IITC-MAM.2015.7325587","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A flexible top metal structure to improve ultra low-k reliability
High stresses generated from chip-package interactions (CPI), especially when large die is flip mounted on organic substrate using Pb-free C4 bumps, can easily cause low-k delamination. A novel scheme by applying an elastic material can effectively reduce the transmitted stresses and, thus, resolve the interfacial delamination issue. Along with an optimized chip-package integration solution, a reliable interconnect structure with good electrical performance, has been successfully demonstrated.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
